2SC5084YTE85LF Allicdata Electronics
Allicdata Part #:

2SC5084YTE85LFCT-ND

Manufacturer Part#:

2SC5084YTE85LF

Price: $ 0.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANSISTOR NPN MM S-MINI
More Detail: RF Transistor NPN 12V 80mA 7GHz 150mW Surface Moun...
DataSheet: 2SC5084YTE85LF datasheet2SC5084YTE85LF Datasheet/PDF
Quantity: 1236
1 +: $ 0.30240
10 +: $ 0.23625
25 +: $ 0.19933
100 +: $ 0.16216
250 +: $ 0.13437
500 +: $ 0.11120
1000 +: $ 0.08340
Stock 1236Can Ship Immediately
$ 0.34
Specifications
Series: --
Packaging: Cut Tape (CT) 
Part Status: Discontinued at Digi-Key
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 11dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59
Description

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The 2SC5084YTE85LF is a NPN epitaxial planar type Transistor which is mainly used for RF (Radio Frequency) applications and is suited for amplifier, mixer and oscillator applications, as it has high gain and high power output. This transistor is typically used in RF amplifiers, oscillators, and mixers. Its high input and output power, characterized wide-band performance, matching pairs, and reliable operation make the device an excellent choice for a wide variety of RF applications.

The 2SC5084YTE85LF is a RF transistor that operates within the frequency range of 300 MHz to 1 GHz. It has a current gain of around 40 to 50 dB, which increases with the increase in applied voltage. This transistor can handle up to 15 watts of power, has a collector-emitter breakdown voltage up to 60 volts, and can maintain a voltage gain of up to 30 dB. The device also features high stability, low noise and excellent linearity.

The working principle of the 2SC5084YTE85LF is based on the junction of a P-type and N-type semiconductor material. When a current flows through this junction, the electrons and holes recombine and create a potential difference across the junction. This potential difference, along with the voltage, is used to control the flow of current through the transistor. When the base-emitter voltage is increased, the current flow through the base-collector junction increases, allowing current flow through the device.

The 2SC5084YTE85LFRF transistor can be used in power amplifiers, mixers, modulators, oscillators, and frequency multipliers to provide high-power output. It is also used in voltage converters and low-frequency amplifiers as it has an excellent linearity and low noise figure. Additionally, the device has good thermal stability and can tolerate high power dissipation. The device is also ideal for use in high frequency applications such as re-transmission systems and cellular networks.

The 2SC5084YTE85LF is a versatile RF transistor that is suited for many applications. It is preferred for its high power output and its ability to maintain a stable characteristic even when exposed to wide-band operation. This device is also capable of providing good linearity with low noise, making it suitable for many high-frequency applications. The 2SC5084YTE85LF is an ideal choice for any RF application due to its excellent performance in power amplifiers, low-frequency amplifiers, voltage converters, mixers, modulators, oscillators, and frequency multipliers.

The specific data is subject to PDF, and the above content is for reference

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