2SC5454-A Allicdata Electronics
Allicdata Part #:

2SC5454-A-ND

Manufacturer Part#:

2SC5454-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: RF TRANSISTOR NPN SOT-143
More Detail: RF Transistor NPN 6V 50mA 14.5GHz 200mW Surface Mo...
DataSheet: 2SC5454-A datasheet2SC5454-A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Strip
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 14.5GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 12dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: --
Description

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The 2SC5454-A bipolar junction transistor (BJT) is a RF transistor designed for use in RF circuits. It is a NPN low-power transistor designed for use in high-frequency amplifier and oscillator circuits. It has a wide range of applications including in mobile communications, GPS navigation, microwave communication, and wireless access points. This article will discuss the application field and working principle of the 2SC5454-A.

The 2SC5454-A is a NPN low-power transistor designed for high-frequency applications up to 2 GHz, with an operating current range of 25 mA to 80 mA. It has a very low noise figure, which makes it ideal for use in noise-sensitive systems such as GPS navigation and mobile communications. The 2SC5454-A has two main application fields. Firstly, it is widely used in low-noise amplifier (LNA) circuits in GPS navigation and mobile communications. Secondly, it is used in RF oscillator circuits. In both of these applications, the low noise figure of the transistor is a major advantage.

The 2SC5454-A has a wide range of features which make it ideal for high-frequency applications. Its maximum frequency of operation is 2 GHz, giving it a wide range of applications. Its maximum power dissipation is 100 mW, and it has an operating temperature range of -40 °C to +100 °C. Its power gain is 35 dB, enabling it to generate high-power signals for transmission. Finally, it has a very low collector-emitter capacitance of 5 pF, making it suitable for use in high-speed circuits.

The working principle of the 2SC5454-A is based on the NPN transistor structure. It consists of three layers of semiconductor materials, with one layer forming the base, one layer forming the emitter, and one layer forming the collector. In operation, a voltage is applied to the base and emitter, creating a junction between the two. This junction forms the transistor, which can be used to control the flow of current through the collector and emitter. A small base current causes a large current to flow between the collector and emitter, amplifying the output signal.

The 2SC5454-A is a highly versatile and reliable transistor, with many useful applications in high-frequency circuits. Its low noise figure and high power handling capabilities make it ideal for use in noise-sensitive systems such as GPS navigation and mobile communications. Its wide range of features allows it to be used in a variety of applications, including RF amplifier and oscillator circuits. This makes the 2SC5454-A an ideal choice for high-frequency circuits.

The specific data is subject to PDF, and the above content is for reference

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