Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	6V
Frequency - Transition:	14.5GHz
Noise Figure (dB Typ @ f):	1.5dB @ 2GHz
Gain:	12dB
Power - Max:	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	75 @ 20mA, 3V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-253-4, TO-253AA
Supplier Device Package:	SOT-143

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2SC5454-T1-A application field and working principle

Introduction

2SC5454-T1-A is a NPN transistor manufactured by Toshiba. It is a surface-mount, planar type transistor used for amplification and switching applications. It is categorized as a Radio Frequency (RF) Bipolar Junction Transistor (BJT). 2SC5454-T1-A is composed of a collector, base and emitter, with each connected to a gold plated lead frame. It is encapsulated in a SOT-123R plastic package which is ideal for high-density mounting.

Application fields

2SC5454-T1-A find use in a variety of applications. Since it is an RF BJT, it is used in the amplification of radio signals. It is used in applications such as amplifiers, receivers, transmitters, oscillators and antennas. It may also be used in switching applications such as in amplifiers, mixers and modulators. This transistor is also ideal for low- and medium-power applications in communications, automotive and consumer electronic systems.

Physical properties

2SC5454-T1-A has a very small physical size, making it ideal for use in low-profile and high-density applications. It has a total package size of 2.0 mm x 1.2 mm x 0.7 mm, making it very compact. This has the additional advantage of reducing power consumption. The lead frame has a 0.5 mm pitch, and the device has a 1.25 mm standing height.

Electrical properties

2SC5454-T1-A has an operating voltage of 6V, which is the voltage required for the device to function correctly. The collector and base current of 2SC5454-T1-A is 15 mA, and the collector and emitter voltage is 35 V. The maximum power dissipation of the device is 500 mW. It has an acceptable noise figure of 8 dB. The transistor has a forward current gain of 40 dB.

Working principle

2SC5454-T1-A works according to the principle of a BJT. It is an NPN type that has three leads: the collector, base and emitter. The base is an amplifier and controls the current flow between the collector and emitter. The emitter sees a voltage drop and sources an input current to the base. This current is amplified by the base and the amplified current is released from the collector. The amplification factor of the transistor can be controlled by adjusting the current flowing from the collector or the base.

Advantages

2SC5454-T1-A is highly advantageous for use in RF applications. It has a low power consumption, as well as a very small physical size. It has high current gain, low capacitance and low noise figure. In addition, the transistor is able to operate in both switching and amplifier applications. Lastly, the device is affordable and is easily available on the market.

Conclusion

The 2SC5454-T1-A transistor is a highly versatile device, capable of operating in both amplifier and switching applications. Due to its small physical size and low power requirements, it is highly suitable for use in high-density and low-profile designs. Additionally, it has a high current gain and low noise figure, making it ideal for RF applications. It is a reliable and cost effective component, and is easily available on the market.

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