Allicdata Part #: | 2SC5233BTE85LFTR-ND |
Manufacturer Part#: |
2SC5233BTE85LF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 12V 0.5A USM |
More Detail: | Bipolar (BJT) Transistor NPN 12V 500mA 130MHz 100m... |
DataSheet: | 2SC5233BTE85LF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 200mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 500 @ 10mA, 2V |
Power - Max: | 100mW |
Frequency - Transition: | 130MHz |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | USM |
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The BTE85LF is a high-performance, small-signal transistor manufactured by Toshiba. Widely considered one of the best-performing transistors on the market, the BTE85LF is used in many industrial and consumer applications, ranging from radio and audio circuitry to logic-level converters, current switches, and power amplifier drivers. The BTE85LF is a small-signal, n-p-n type bipolar junction transistor. It utilizes the latest in semiconductor technology to deliver reliable performance and excellent longevity in a wide range of applications.
The most common application for the BTE85LF is as a switching device in high-frequency circuits. It can be used to switch on and off high-frequency digital signals and control audio signals, as well as handle RF amplifying and switching. These features make it a suitable choice for high-end applications, such as mobile phones, digital TVs, and audio systems. In addition, the BTE85LF is also suitable for general-purpose switching applications, like low-power logic circuits and analog signal control.
Another important application of the BTE85LF is as a power amplifier driver or current switch. It can be used to provide current drive or as a buffer to the power amplifier to amplify and change the signal. The BTE85LF is an effective solution for automotive, aerospace and industrial applications where the transistor needs to be switched quickly and often. Additionally, it is also advantageous for multi-channel applications in low-power applications.
The working principle behind the BTE85LF is based on a regular Bipolar Junction Transistor (BJT). A BJT consists of a base, collector and emitter, which each share a common junction. When a current passes through the base of a BJT, it controls a larger current in the collector-emitter circuit. This is the basis of the transistor switch, and is the main working principle employed by the BTE85LF.
The BTE85LF offers a number of advantages over other transistors of similar size and purpose. These include improved scalability, higher switch speeds, greater efficiency, and improved power handling abilities. It also has a wide range of operating temperatures (-55°C to 150°C), making it suitable for a variety of applications in different climates. The BTE85LF is also constructed using high-grade materials and built with high-precision manufacturing techniques to ensure reliable operation and long-term service even in the most demanding environments.
In conclusion, the BTE85LF is a high-performance, small-signal transistor manufactured by Toshiba. It is capable of high-frequency switching and operates effectively as a power amplifier driver or current switch in automative, aerospace and industrial applications. Additionally, its scalability, switch speed, and efficiency make it a good choice for high-end applications. The BTE85LF is designed with durable components and superior manufacturing techniques to keep it running smoothly and reliably even in challenging conditions.
The specific data is subject to PDF, and the above content is for reference
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