Allicdata Part #: | 2SC5095-R(TE85LF)TR-ND |
Manufacturer Part#: |
2SC5095-R(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANSISTOR NPN MM-USM |
More Detail: | RF Transistor NPN 10V 15mA 10GHz 100mW Surface Mou... |
DataSheet: | 2SC5095-R(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 10V |
Frequency - Transition: | 10GHz |
Noise Figure (dB Typ @ f): | 1.8dB @ 2GHz |
Gain: | 13dB ~ 7.5dB |
Power - Max: | 100mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 7mA, 6V |
Current - Collector (Ic) (Max): | 15mA |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70 |
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2SC5095-R(TE85L,F): Application Field and Working Principle
The 2SC5095-R(TE85L), also known as the RF transistors, are a type of bipolar junction transistors (BJT) that are most commonly used in RF applications. Due to their ability to amplify and switch high frequencies, they find a wide range of applications in many modern electronic systems.
A bipolar junction transistor (BJT) consists of three terminals: base, collector, and emitter. The base and collector are heavily doped using different materials or doping agents, and the emitter is slightly doped so that the carriers, meaning electrons or holes, can quickly enter and flow through the transistor.
In the 2SC5095-R(TE85L,F) transistor, the E-B and B-C junctions are forward biased, allowing the flow of electric current. To understand the working principle, suppose that a small current is forced into the base and emitter connections. When this current is zero, no current can flow through the transistor. However, when the current is increased beyond the zero-bias level, a small emitter current flows, which causes the voltage difference across the base-collector junction to increase. This increases the current-gain of the transistor and therefore, allowing a larger current to be amplified. The current gain can be expressed mathematically as the ratio between the collector current and the base current, which is, hfe = Ic / Ib.
The 2SC5095-R(TE85L,F) transistors are mostly used for RF applications, including light dimmers, RF amplifiers, high-speed switches, etc. Due to its high gain, linear characteristics, and wide operating temperature range of -55°C to +150°C, the 2SC5095-R(TE85L,F) are ideal for use in wireless circuits and systems. Moreover, its low noise and low power rating makes it suitable for portable and low-power applications.
The 2SC5095-R(TE85L,F) transistor has a wide range of applications, and it is commonly used in AC-DC switch mode power supplies, radio frequency amplifiers and oscillators, radio transmitters, detectors, and receivers. Additionally, they are used in general purpose switching, modulation and frequency control circuit.
In conclusion, the 2SC5095-R(TE85L,F) transistors are the most commonly used transistor for RF applications, providing the needed gain, linear characteristics and wide operating range for many modern electronic systems. Owing to its wide range of applications, it is highly preferred for applications in high-speed switching, low power and low noise applications.
The specific data is subject to PDF, and the above content is for reference
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