2SC5706-P-E Allicdata Electronics
Allicdata Part #:

2SC5706-P-E-ND

Manufacturer Part#:

2SC5706-P-E

Price: $ 0.27
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 100V 5A
More Detail: Bipolar (BJT) Transistor NPN 100V 5A 400MHz 800mW ...
DataSheet: 2SC5706-P-E datasheet2SC5706-P-E Datasheet/PDF
Quantity: 1000
1000 +: $ 0.24036
Stock 1000Can Ship Immediately
$ 0.27
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 800mW
Frequency - Transition: 400MHz
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TP
Description

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2SC5706-P-E is a type of single bipolar transistor composed of three terminals: a base, a collector and an emitter, used in a wide range of electronic applications. The 2SC5706-P-E has a wide variety of application fields, while its working principle is in the same way as other transistors.

A bipolar transistor is a three-terminal electronic device with two p-n junctions connected to each other and acting as a voltage-controlled switch, which can be used in amplification, switching, and other electronic applications. Generally, the two p-n junctions consist of two highly doped materials (i.e., a p-type material and an n-type material). When combined, the two materials create a p-n junction; due to their combined doping, electric current is allowed to flow between them, consequently creating a voltage drop across the junction. Since the voltage drop is voltage-controlled, a transistor can be used to amplify current flowing through it.

The 2SC5706-P-E, in particular, is used for various application fields such as power sourcing, motor driving, logic level shifting, and in voltage regulator circuits. It has an E-bias of 65V, a collector current of 2A, and a continuous collector current of 1.5A.

The base is the control part of the transistor, meaning that it determines whether the transistor is switched fully on (saturated) or not, with the collector being the “output” of the transistor. By adding current to the base, the transistor will switch on, controlling current flow between the emitter and collector. This can be used to control other electronic components, such as amplifying a signal.

The 2SC5706-P-E has a wide range of applications including power sourcing, motor driving, logic level shifting, and in voltage regulator circuits. Due to its low on-resistance, it can also be used in various switch and DC-DC converter applications as well as control circuits. Its high current carrying capacity and breakdown voltage make it useful for applications with large voltages and currents.

The most important factor in the 2SC5706-P-E is its relatively low thermal resistance, allowing it to function at higher temperatures and frequencies. Its structure is designed to reduce parasitic capacitance, allowing for higher frequency operation, and its high surge energies help to reduce noise and distortion.

In conclusion, 2SC5706-P-E transistors are a versatile component used in a wide range of electronic applications due to their low thermal resistance, high current carrying capacity, and low on-resistance. They can be used in many types of circuits including power sourcing, motor driving, logic level shifting, and in voltage regulator circuits. Additionally, their structure gives them a high frequency operation, low noise and surplus energies, making them ideal components for many applications.

The specific data is subject to PDF, and the above content is for reference

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