Allicdata Part #: | 2SC5231C8-TL-E-ND |
Manufacturer Part#: |
2SC5231C8-TL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 0.07A 10V |
More Detail: | Bipolar (BJT) Transistor Surface Mount SMCP |
DataSheet: | 2SC5231C8-TL-E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | -- |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Frequency - Transition: | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SMCP |
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Introduction
2SC5231C8-TL-E is a type of single-ended input PNP transistor designed by Toshiba\'s Semiconductor Company. It is a type of PNP transistor that uses one of the two main current flow classes, bipolar (BJT) for amplification and switching applications. The transistor\'s silicon chip is equipped with a band gap to provide a built-in bias when necessary. It is packaged in a vacuum form, with a polarity that is indicated by a sign marking on the base.
Application Field
Toshiba\'s 2SC5231C8-TL-E has a wide range of applications. It can be used to amplify weak signals or square waves, or it can be used as a switch in circuits that require a low input power. Additionally, it is commonly used to build voltage-controlled oscillators, class AB amplifiers, small robotic servo motors, as well as in a range of analog circuit designs. It can also be used in power supplies, air conditioning systems and many other applications that require a high output current.
Working Principle
Like other transistors, the 2SC5231C8-TL-E operates as a three-layer semiconductor device. The three layers consist of the emitter, base and collector. The emitter layer emits a current In when a small forward-biased voltage is applied to it. The base layer controls the current In. It is insulated from the emitter and the collector. The collector layer collects the current In and amplifies it by multiplying it with the connection\'s hFE (commonly referred to as the "gain"). The amplification is dependent on the amount of current In and the amplitude of the forward-biased voltage applied to the emitter.
Conclusion
The 2SC5231C8-TL-E is a PNP single-ended input BJT transistor manufactured by Toshiba\'s Semiconductor Company. It is commonly used in numerous applications, such as signal amplification and switching, voltage-controlled oscillators, class AB amplifiers, small robotic servo motors and more. Its working principle is based on the three-layer semiconductor principle of emitting, controlling and collecting current.
The specific data is subject to PDF, and the above content is for reference
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