Allicdata Part #: | 2SC5006-T1-ATR-ND |
Manufacturer Part#: |
2SC5006-T1-A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | RF TRANSISTOR NPN SOT-523 |
More Detail: | RF Transistor NPN 12V 100mA 4.5GHz 125mW Surface M... |
DataSheet: | 2SC5006-T1-A Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 4.5GHz |
Noise Figure (dB Typ @ f): | 1.2dB @ 1GHz |
Gain: | 9dB |
Power - Max: | 125mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 7mA, 3V |
Current - Collector (Ic) (Max): | 100mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-523 |
Supplier Device Package: | SOT-523 |
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2SC5006-T1-A is a NPN RF transistor manufactured by Japanse Sanken Electric, which is commonly used as an amplifier in discrete operations and switching modes. Its main purpose is to amplify radio frequency signals. Being a bipolar transistor, it is also used as a driver or switch to drive or switch operations, given its impressive performance and durability.
In terms of its electrical indices, the 2SC5006-T1-A is rated with a total current and collector-emitter voltage of 2.8A and 140V respectively, with a maximum operating frequency of 350MHz. Its collector-base cutoff frequency (fT) of 40MHz, along with its collector-emitter saturation voltage of 0.3V, make it ideal for amplifying and switching relatively low-power circuits.
As for the specifications and characteristics of the 2SC5006-T1-A, it is manufactured in a domed package that measures 0.83mm2 and encapsulates a 15kHz collector-emitter cut-off current (Ie) and collector-emitter gain (hFE) of 80 and 270 respectively. In addition, it is rated with a low noise hFE of 25 A/V, as well as a collector- emitter switching frequency of 1.2GHz.
The 2SC5006-T1-A is a bipolar RF transistor, having both circuitry elements and features such as PNP and NPN transistors. It is capable of amplified and modulated signals, as well as switched power circuits. When it comes to its working principle, the 2SC5006-T1-A operates on the basis of the field effect transistor (FET) principle which states that changes in the collector-base voltage will result in an inversely proportional change in the collector current. This voltage-dependent current is made possible by the structure of the PNP and NPN transistors.
In terms of its application field, the 2SC5006-T1-A is suitable for use in electronic communication components and systems, such as power amplifiers, power switch drivers, high-voltage linear amplifiers, radar systems, and medium-power transistor switching applications.2SC5006-T1-A is utilized for its ability to produce strong, flat signals when operated in conjunction with a low noise amplifier. Many automobile navigation and communication systems also use this transistor to amplify radio frequency signals.
Overall, the 2SC5006-T1-A is an efficient, reliable and durable bipolar RF transistor used in various communication and navigation systems. Its impressive characteristics and low noise hFE make it suitable for applications requiring low-power circuits, while its collector-base cutoff frequency of 40MHz and collector-emitter saturation voltage of 0.3V make it a reliable choice for amplifying medium-power transistor switching applications.
The specific data is subject to PDF, and the above content is for reference
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