2SC5488A-TL-H

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	10V
Frequency - Transition:	7GHz
Noise Figure (dB Typ @ f):	1dB @ 1GHz
Gain:	12dB
Power - Max:	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	90 @ 20mA, 5V
Current - Collector (Ic) (Max):	70mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	3-SMD, Flat Leads
Supplier Device Package:	3-SSFP

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2SC5488A-TL-H Application Field and Working PrincipleThe 2SC5488A-TL-H is a type of RF (Radio-Frequency) transistor, also known as a Bipolar Junction Transistor (BJT), that is intended for use in a variety of applications, including radio transmitters and receivers, frequency multipliers and converters, oscillators, and amplifiers. It is a general-purpose device, with a maximum frequency capability of 10GHz, making it suitable for use in a wide range of radio-frequency (RF) applications.The 2SC5488A-TL-H has three pins, labeled "emitter," "collector," and "base." The emitter and collector pins supply the voltage and current necessary for the device to operate. The base pin provides the control signal for the transistor. The collector-emitter voltage can be adjusted from 0.05V to 40V, making the device suitable for use in a wide range of applications.To understand the working principle of the 2SC5488A-TL-H, one must first understand the basic operation of a BJT. BJTs are current-controlled devices, meaning the current flowing through the device is controlled by an external current applied to the base terminal. The external current causes the internal current to flow between the emitter and collector terminals. This internal current is known as the collector current, or Ic. It is this current which is used to control the operation of the device.The operation of the 2SC5488A-TL-H can be broken down into three steps: bias, conduction, and cut-off. During the bias step, the collector-emitter voltage, known as VCE, is adjusted to provide the correct amount of operating current. In the conduction step, the collector current, Ic, is increased, allowing more current to flow between the emitter and collector, thus amplifying the signal. Finally, during the cut-off phase, the collector current is reduced and the device again becomes non-conducting, thus cutting off the amplified signal.The 2SC5488A-TL-H is a general-purpose transistor, suitable for use in a wide range of RF applications. With its wide range of operating parameters, such as a maximum frequency of 10GHz and a wide range of collector-emitter voltage, it is well-suited for use in a variety of radio-frequency-related applications. As well as this, it is useful for both low-power and high-power applications, making it a versatile device for both professional and hobbyist uses.

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