2SC5606-T1-A Discrete Semiconductor Products |
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Allicdata Part #: | 2SC5606-T1-ATR-ND |
Manufacturer Part#: |
2SC5606-T1-A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | RF TRANSISTOR NPN SOT-523 |
More Detail: | RF Transistor NPN 3.3V 35mA 21GHz 115mW Surface Mo... |
DataSheet: | 2SC5606-T1-A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 3.3V |
Frequency - Transition: | 21GHz |
Noise Figure (dB Typ @ f): | 1.2dB @ 2GHz |
Gain: | 14dB |
Power - Max: | 115mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 2V |
Current - Collector (Ic) (Max): | 35mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-523 |
Supplier Device Package: | SOT-523 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 2SC5606-T1-A is a bipolar junction transistor (BJT) designed for radio frequency (RF) applications. It is a NPN transistor that was created over two decades ago. It is part of a series of transistors that are commonly used in Wi-Fi transmitters, RF amplifiers, microwave ovens and other low-noise amplifiers.
The 2SC5606-T1-A is a microwave transistor with low noise and high linearity. It has a wide frequency range of up to 200 MHz, which makes it well suited for many types of amplifiers. It has a high gain and a low noise figure, which allows it to be used in many RF applications. The most common uses of the 2SC5606-T1-A include low-noise amplifiers, low-power amplifiers, and oscillator circuits.
The 2SC5606-T1-A is a three-terminal device composed of an emitter, base, and collector. It is usually packaged in a TO-55 case, which is a type of miniature package. In operation, the collector is held at a higher potential than the base, and the base is held at a higher potential than the emitter. This arrangement allows electrons to flow from the emitter to the collector. As the electrons flow through the transistor, the current gain is determined by the collector current, which is controlled by the input voltage on the base.
The common-emitter circuit is the most common application of the 2SC5606-T1-A. In this circuit, the base of the transistor is connected to the input signal, and the collector is connected to the output. The current flow through the transistor amplifies the incoming signal and produces a larger output signal. This allows for a wide variety of applications, including voltage amplifiers and audio amplifiers.
The 2SC5606-T1-A is a rugged device and can be operated at temperatures up to 175°C. It is also resistant to vibration and shock, making it suitable for a variety of applications. With its low-noise performance, wide frequency range, high gain, and low-power operation, the 2SC5606-T1-A is an ideal choice for many RF applications.
In summary, the 2SC5606-T1-A is an excellent choice for radio frequency and microwave applications. It is a robust device with a wide frequency range and low noise, making it suitable for many types of amplifiers and oscillators. Its rugged design makes it suitable for demanding environments, and its low power operation ensures its long-term reliability. The 2SC5606-T1-A is an ideal choice for many RF applications.
The specific data is subject to PDF, and the above content is for reference
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