2SC5227A-5-TB-E Allicdata Electronics
Allicdata Part #:

2SC5227A-5-TB-EOSTR-ND

Manufacturer Part#:

2SC5227A-5-TB-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN BIPO VHF-UHF CP
More Detail: RF Transistor NPN 10V 70mA 7GHz 200mW Surface Moun...
DataSheet: 2SC5227A-5-TB-E datasheet2SC5227A-5-TB-E Datasheet/PDF
Quantity: 3000
Stock 3000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Gain: 12dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CP
Description

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Transistors are often used to amplify and switch electrical signals in electronic devices. Transistors come in many varieties and can be used for a wide range of applications. The 2SC5227A-5-TB-E is a type of bipolar junction transistor (BJT) that is specifically designed for radio frequency (RF) applications. The 2SC5227A-5-TB-E can be used for a variety of RF applications, including amplifying, detecting and switching signals in low power radio communication systems.

What is a Bipolar Junction Transistor?

A bipolar junction transistor (BJT) is a type of transistor that utilizes three terminals to control current flow. It consists of two p-n junctions connected in series and has two p-type and one n-type layer. When a small current is applied to the base terminal, it controls the amount of current that is allowed to flow through the collector and emitter terminals. This is known as transistor amplification, or current gain.

How Does the 2SC5227A-5-TB-E Work?

The 2SC5227A-5-TB-E is a BJT specifically designed for radio frequency (RF) applications. It has a low noise figure of 5dB, a high gain of 15dB, and a maximum frequency of 3 GHz. Internally, the 2SC5227A-5-TB-E has three different regions: an emitter region, a base region, and a collector region. The base region, which is the control region, is where a small current is applied to control the amount of current that flows through the emitter and collector regions. When the base current is increased, more current is allowed to flow through the emitter and collector. Because the 2SC5227A-5-TB-E is designed for RF applications, it is designed to switch very quickly between the on and off states.

Applications of the 2SC5227A-5-TB-E

The 2SC5227A-5-TB-E can be used for a variety of RF applications, including amplifying, detecting, and switching signals in low power radio communication systems. It can also be used for signal modulation and demodulation in wireless transceivers or in signal processing devices. Additionally, the 2SC5227A-5-TB-E can be used in complex microwave systems such as antennas and amplifier systems, where high-speed switching is required.

Conclusion

The 2SC5227A-5-TB-E is a type of bipolar junction transistor (BJT) that is specifically designed for radio frequency (RF) applications. It has a low noise figure and a high gain, making it well suited for RF applications. The 2SC5227A-5-TB-E can be used for a variety of RF applications, including amplifying, detecting, and switching signals in low power radio communication systems, as well as for signal modulation and demodulation in wireless transceivers and signal processing devices. Furthermore, it can be used in complex microwave systems where high-speed switching is required.

The specific data is subject to PDF, and the above content is for reference

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