2SC5706-H Allicdata Electronics
Allicdata Part #:

2SC5706-HOS-ND

Manufacturer Part#:

2SC5706-H

Price: $ 0.19
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 50V 5A TP
More Detail: Bipolar (BJT) Transistor NPN 50V 5A 400MHz 800mW T...
DataSheet: 2SC5706-H datasheet2SC5706-H Datasheet/PDF
Quantity: 1000
1500 +: $ 0.17161
Stock 1000Can Ship Immediately
$ 0.19
Specifications
Series: --
Packaging: Bulk 
Part Status: Last Time Buy
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 800mW
Frequency - Transition: 400MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TP
Base Part Number: 2SC5706
Description

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Bipolar junction transistors (BJTs) have been widely used in various electronic circuits for many decades now. Generally speaking, BJTs are semiconductor devices that use two layers of different semiconductor materials that are separated by a thin layer of insulator. These devices allow a current to flow between two terminals while blocking current from flowing across the third terminal. One type of BJT is the 2SC5706-H BJT, which is often used in analog circuits. This article will discuss the application fields and working principles of the 2SC5706-H BJT.

Application Fields of the 2SC5706-H BJT

The 2SC5706-H is an NPN switching transistor which is often used for switching low-to-moderate current signals and for amplifying electronic signals. Some typical applications for the 2SC5706-H include switching applications such as digital circuits, amplifying small signals (such as Bluetooth signals), and driving LEDs. The 2SC5706-H also has low power consumption which makes it suitable for battery-powered devices. As such, this BJT is often used in mobile devices, home appliances, automotive electronics, and other battery-powered devices.

Working Principles of the 2SC5706-H BJT

The 2SC5706-H BJT is composed of three terminals: the collector (C), base (B) and emitter (E). When a small current is applied to the base terminal, a large current will flow from the collector to the emitter. This large current is the amplified signal. The collector current is proportional to the base current and is also inversely proportional to the collector-emitter voltage.

When a positive voltage is applied to the base terminal, electrons from the emitter will be attracted to the base and then combined with the majority charge carriers present at the base. The electron-hole recombination at the base junction provides a low-resistance path between collector and emitter, allowing current to flow from collector to emitter. This process is called the forward-biased of a BJT.

On the other hand, when a negative voltage is applied to the base terminal, the electron-hole recombination is inhibited and the base junction acts as an open circuit. This effectively prevents current from flowing from collector to emitter, thus turning off the 2SC5706-H BJT. This process is called the reverse-biased of a BJT.

Conclusion

To sum up, the 2SC5706-H is a type of NPN BJT that is commonly used for switching and amplifying electronic signals. This BJT works by allowing or inhibiting current flow between collector and emitter depending on the base voltage. This BJT is often used in mobile devices, home appliances, and other consumer electronic applications due to its low power consumption.

The specific data is subject to PDF, and the above content is for reference

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