| Allicdata Part #: | 2SC5750-A-ND |
| Manufacturer Part#: |
2SC5750-A |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | CEL |
| Short Description: | RF TRANSISTOR NPN SOT-343 |
| More Detail: | RF Transistor NPN 6V 50mA 15GHz 200mW Surface Moun... |
| DataSheet: | 2SC5750-A Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Strip |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 6V |
| Frequency - Transition: | 15GHz |
| Noise Figure (dB Typ @ f): | 1.7dB @ 2GHz |
| Gain: | 15dB |
| Power - Max: | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 75 @ 20mA, 3V |
| Current - Collector (Ic) (Max): | 50mA |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-82A, SOT-343 |
| Supplier Device Package: | -- |
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The 2SC5750-A is a high-frequency power transistor available in a TO-3P package, specifically designed for RF high-power applications. It has an extreme frequency range of 13.5 to 1375 MHz, and is a bipolar junction transistor (BJT). Due to its high frequency range and high power ratings, the 2SC5750-A is capable of high-frequency power amplification in many applications.
Working Principle
The 2SC5750-A is a NPN type BJT, meaning it has positively doped (p-doped) regions between two layers of negatively doped (n-doped) regions. This construction provides a single junction between the base and the collector, allowing current to flow from collector to emitter in two distinct stages. The base current acts as a control signal, allowing for the conduction of current when the correct bias voltage is applied.
Once the right bias voltage is applied, electric current begins to flow in the emitter and is attracted toward the collector. The amount of current depends on the base current, a slight and dependent current, which acts as a control signal. As the emitted current and the base current increase, the collector current also increases, which in turn amplifies the resulting signal.
Application Field
The 2SC5750-A is commonly used in high-power RF amplification applications, such as radio transmitters, cellular base station amplifiers and other communication circuits. It can also be used in audio applications, such as guitar or bass amplifiers, since it provides spectacular sound. This transistor offers excellent power gain characteristics due to its high frequency range, making it ideal for amplifying high frequencies.
The 2SC5750-A is also used in power control systems, such as automotive, heavy machinery, and motor drive systems. Its low gate capacitance and on-resistance make it an ideal choice for switching power supplies and motor drivers. Thanks to its fast switching times and low resistance, it can provide the power and the accuracy necessary in these applications. With its high current capacity, the 2SC5750-A is one of the most efficient and reliable transistors on the market.
Conclusion
The 2SC5750-A is a high-power RF bipolar junction transistor designed for quality audio and RF power amplification. It is a reliable and efficient transistor that can provide excellent power gain characteristics due to its wide frequency range, making it ideal for high-frequency applications. Its low gate capacitance and on-resistance make it an ideal choice for power control systems, such as automotive and interactive industrial control, as well as audio systems. Consequently, the 2SC5750-A is a popular transistor used in numerous applications.
The specific data is subject to PDF, and the above content is for reference
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2SC5750-A Datasheet/PDF