2SD12630P

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	750mA
Voltage - Collector Emitter Breakdown (Max):	250V
Vce Saturation (Max) @ Ib, Ic:	1V @ 200mA, 1A
Current - Collector Cutoff (Max):	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 300mA, 10V
Power - Max:	2W
Frequency - Transition:	30MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220F-A1

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Transistors - Bipolar (BJT) - Single comprise a variety of devices that are used to control power, voltage and current in circuits. A particularly popular type of single bipolar junction transistor (BJT) is the 2SD12630P, which is commonly used for high voltage and high wattage applications. This article will discuss the characteristics of the 2SD12630P, its application field, and its working principle.

Characteristics of the 2SD12630P

The 2SD12630P is a PNP silicon transistor integrated with a bonded wafer substrate and an insulated coaxial package. It is a high power silicon PNP transistor which is ideal for switching applications, with a maximum collector-emitter voltage rating of 600 V and a maximum collector-emitter dissipation rating of 15 W. It also has a high lead emitter briefing current of 150 A, making it suitable for applications requiring a high current density. Additionally, it has a minimum base current of 1.0 mA, an input capacitance of 120pF and a high forward current transfer ratio of 850 at 800 mA and 60V.

Application Field of the 2SD12630P

The 2SD12630P transistor is widely used in automotive and industrial electronics applications, especially in high voltage and high wattage applications. It is often used in charging circuits found in lithium-ion battery packs and also makes an excellent switch in high wattage ON/OFF circuits. The high wattage can also be used in power amplifiers, where the high wattage is necessary to drive heavy load requirements. Additionally, it can be used in switching mode power supplies, line switching applications, and motor control applications where its high lead emitter briefing current is necessary. Other examples of applications include DC-DC converters and AC-DC converters.

Working Principle of the 2SD12630P

The 2SD12630P is an example of a PNP bipolar junction transistor (BJT). It operates by controlling the current which flows between Collector and Emitter electrodes when a voltage is applied at the base electrode. When the base voltage is low, the current between the Collector and Emitter is blocked. When the base voltage is increased, the current between Collector and Emitter is allowed to flow. As this current flows, it acts as a switch and is used to turn on and off circuits. Because of its high power rating, the 2SD12630P is often used to switch or control high wattage and high voltage devices.

Overall, the 2SD12630P is an excellent choice for applications requiring a high wattage and/or high voltage switching device. Its high voltage rating and high wattage ratings make it suitable for many automotive, industrial and consumer electronics applications. Additionally, its high lead emitter briefing current and high forward current transfer ratio make it an attractive choice for switching and motor control applications.

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