| Allicdata Part #: | 2SD1835S-AAX-ND |
| Manufacturer Part#: |
2SD1835S-AAX |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANSISTOR NPN |
| More Detail: | Bipolar (BJT) Transistor |
| DataSheet: | 2SD1835S-AAX Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | * |
| Part Status: | Obsolete |
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Transistors - Bipolar (BJT) - Single
2SD1835S-AAX is a single base-emitter transistor with a PNP epitaxial planar type structure. This transistor can be used in various FM, AM, and other applications in general purpose communications, driver and power amplifier circuits. It has a maximum collector current of 3A and peak collector-emitter voltage of 50V.
Application Fields
The 2SD1835S-AAX transistor can be used in audio frequency power amplifiers, power switching and switching circuits, Class B power amplifier output stages, high frequency amplifiers, differential amplifiers, and radio frequency power amplifiers. Its high speed switching capability makes it suitable for applications such as precision amplifier circuits, surge suppressors, and digital logic ICs.
Working Principle
A bipolar transistor consists of three terminals: the base (B), collector (C), and emitter (E). In the 2SD1835S-AAX device, the base is connected to the emitter, while the collector is connected to the power supply. When power is applied to the base, it allows current to flow from the emitter to the collector. This current flow is modulated by the amount of current being supplied to the base.
The current flow increases as the voltage across the base-emitter junction increases. This increase in current also increases the voltage across the collector-emitter junction, which in turn allows more current to flow from the collector to the emitter. This process continues until the collector current reaches a steady state.
The 2SD1835S-AAX transistor is designed to withstand large power and temperature fluctuations, allowing it to be used in many different environments. It is also able to drive very large loads, making it ideal for power amplifier circuits and power switching applications. Its low saturation voltage also makes it suitable for many low power applications.
Conclusion
The 2SD1835S-AAX is a single base-emitter transistor with a PNP epitaxial planar structure. It has a high speed switching capability and can be used in dramatic environments. The device can be used in various FM, AM, and other applications in general purpose communications, driver and power amplifier circuits. It has been designed to be extremely reliable and to withstand large power and temperature fluctuations, making it suitable for many low power applications.
The specific data is subject to PDF, and the above content is for reference
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2SD1835S-AAX Datasheet/PDF