2SD1963T100S Allicdata Electronics
Allicdata Part #:

2SD1963T100S-ND

Manufacturer Part#:

2SD1963T100S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN 20V 3A SOT-89
More Detail: Bipolar (BJT) Transistor NPN 20V 3A 150MHz 2W Surf...
DataSheet: 2SD1963T100S datasheet2SD1963T100S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 450mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
Power - Max: 2W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3
Description

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The 2SD1963T100S is part of a family of transistors used for a variety of electronic applications. This particular model is a single bipolar junction transistor (BJT), which is typically used in low-power, small-signal amplifier and switching applications in the radio-frequency range. In order to understand the 2SD1963T100S better, it is useful to explore its features, application fields, and its basic principles of operation.

Features of the 2SD1963T100S

The 2SD1963T100S is a NPN-type transistor (NPN stands for ‘Negative Positive Negative’). It has a voltage rating of 30V, a surge current rating of 0.4A, and a maximum collector power dissipation of 800mW. Its features also include a collector-emitter breakdown voltage of -35V, an emitter-base breakdown voltage of -7V, and a maximum collector-emitter voltage of 25V. Finally, its maximum collector current is 600mA.

Application Fields of the 2SD1963T100S

Due to its properties, the 2SD1963T100S is especially suited for low-power, small-signal applications in the radio-frequency range. Some of these applications include audio amplifiers and mixers, oscillators, detectors, and frequency discriminators. Additionally, the 2SD1963T100S is also used in power vacuum tube audio amplifiers, receiver automatic gain control circuits, and in interstage audio amplifier couplers, among other applications.

Working Principles of the 2SD1963T100S

The basic principles of operations for the 2SD1963T100S involve the use of base current to control the collector current. The base current creates a forward bias on the base-emitter junction, which in turn causes collector-emitter current to be created. As the base current increases, the collector current also increases proportionally. The input impedance of the 2SD1963T100S is quite high, due to the transistor’s internal resistance. This allows the transistor to amplify a small input current without losing any significant amount of energy in the form of heat. Additionally, the base current can be controlled using a number of techniques such as using a voltage source, a current source, or even an external resistor.The 2SD1963T100S can be used in a wide variety of applications due to its features, such as its low power requirements, high input impedance, and ability to work in the radio-frequency range. The basic principles of operation for the 2SD1963T100S are relatively simple, involving the control of base current to control the collector current.

The specific data is subject to PDF, and the above content is for reference

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