2SD11990S

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	50mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	200mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	600 @ 2mA, 10V
Power - Max:	400mW
Frequency - Transition:	120MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	3-SIP
Supplier Device Package:	M-A1

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<h2>2SD11990S application field and working principle</h2><p>The 2SD11990S, or 2SD11990 Series, is a line of NPN silicon vertical power Darlington transistors made by Toshiba, operating at collector-base voltages up to 300V and up to 12A. This series of power transistors is commonly used in different applications, ranging from small-scale consumer electronics, to industrial machines, like DC motors and other inverter-driven systems.</p><p>The 2SD11990S is a vertical power Darlington transistor, meaning it\'s designed to handle higher power loads, have better current gain and a higher voltage gain than typical transistors. In its operation, the collector current (Ic) of a Darlington transistor is equal to the sum of two transistor currents (Ib1 and Ib2), each of which is the emitter current of one of the two transistors. This makes Darlington transistors very useful in high-power applications.</p><p>The 2SD11990S also has a few unique features that make it well-suited for its intended usages, such as its high current gain, high collector-base voltage, low saturation voltage, low collector-emitter saturation voltage, and low collector-base turn-on time.</p><p>One of the most notable applications for the 2SD11990S is in motor control systems. The high current gain and low saturation voltage of the 2SD11990S allows for efficient and powerful motor control, with high power output and low power consumption. The 2SD11990S is also ideal for use in high-frequency switching applications, such as for powering relays or other devices.</p><p>The 2SD11990S has a few advantages over other types of transistors. One of the most obvious benefits is its high current gain, which allows it to more efficiently handle high-power applications. Secondly, its low saturation voltage and fast turn-on time allow for rapid switching and higher power efficiency. Lastly, its low collector-base voltage makes it better suited for use in systems with high supply voltages.</p><p>The working principle of the 2SD11990S is relatively simple: the voltage applied to its base controls the current flow through it, thus dictating the amount of power output it can produce. When its base voltage is high, it will output more power, and when its base voltage is low, it will output less power. It\'s this simple operation that makes the 2SD11990S an ideal choice for applications that require high power output, such as motor control.</p><p>In conclusion, the 2SD11990S is a powerful and efficient Darlington transistor that is commonly used in high-power applications, including motor control systems and high-frequency switching. Its high current gain, low saturation voltage, and low collector-base voltage make it ideal for these tasks. Its simple operation also makes it easy to understand and implement in any design.</p>

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