Allicdata Part #: | 2SD13020RATB-ND |
Manufacturer Part#: |
2SD13020RA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN 20V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 20V 500mA 200MHz 600m... |
DataSheet: | 2SD13020RA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 20mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 500mA, 2V |
Power - Max: | 600mW |
Frequency - Transition: | 200MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-B1 |
Base Part Number: | 2SD1302 |
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. The 2SD13020RA transistor is a type of bipolar junction transistor (BJT), which is specifically termed as a single device. This device can be used to amplify or switch electronic signals and electrical power via two separate channels and, due to its bipolar nature, can be used in both analogue and digital applications.
The 2SD13020RA transistor consists of two terminals, collector and emitter, and a single base connection. Depending on the type of base design, the 2SD13020RA transistor features a maximum collector current in the range of 0.5A, a collector-emitter voltage of 80V, a junction temperature of up to 125°C, and an emitter-base voltage of up to 6V.
The primary application field of the 2SD13020RA transistor is powering switching units as well as amplifying, controlling, and regulating electrical signals. This single device enables two-terminal control, which is ideal for switching and amplification purposes. Additionally, this device is suited for operating conditions including circuits requiring repetition, oscillator circuits, and timing functions. Moreover, the 2SD13020RA can be used in logical gate circuits for handling logic operations.
The working principle of the 2SD13020RA transistor is a combination of three semiconductor layers, namely an emitter layer, a base layer, and a collector layer. The movement of the electric current between the base and emitter regions influences the current flowing between the collector and the emitter regions. When collector current increases, the base current decreases and vice versa. The differential change in the base current underpins the functionality of the transistor.
In order to use the 2SD13020RA transistor for amplification, it is necessary to pair it with a separate base-emitter bias network. Depending on the type of biasing network and the type of signal, the signal flow between the collector and emitter regions can be adjusted, increasing or decreasing its strength accordingly. Thus, the amplified output produced from this single device can subsequently be used for driving and switching electronic circuits.
In conclusion, the 2SD13020RA is a single device belonging to the Bipolar Junction Transistor (BJT) series and is designed primarily to amplify and switch electrical/electronic signals and power. This device features two terminals, (collector and emitter) and a single base connection. Furthermore, its working principle is based upon the variations of current flow between the various layers of the transistor. This single device can be used to efficiently amplify, control, and regulate electrical signals in a wide range of applications, including powering switching units, repetition circuits, oscillator circuits, timing mode, and logic gates operations.
The specific data is subject to PDF, and the above content is for reference
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