2SD1733TLR Allicdata Electronics
Allicdata Part #:

2SD1733TLRTR-ND

Manufacturer Part#:

2SD1733TLR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN 80V 1A SOT-428
More Detail: Bipolar (BJT) Transistor NPN 80V 1A 100MHz 10W Sur...
DataSheet: 2SD1733TLR datasheet2SD1733TLR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Power - Max: 10W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: CPT3
Base Part Number: 2SD1733
Description

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The 2SD1733TLR belongs to transistors - bipolar (BJT) - single. Its main function is amplification, and it can also be used as a switch in certain applications. This transistor has a wide range of applications in fields such as power electronics, radio frequency amplifcation, audio products and industrial automation.

The 2SD1733TLR is made up of two active components, namely an NPN bipolar junction transistor and an N-channel depletion-mode MOSFET. The NPN bipolar junction transistor (BJT) is responsible for the input and output, while the N-channel depletion-mode MOSFET is responsible for the protection and control of the circuit. The 2SD1733TLR is composed of two HBTs, PNP and NPN. The PNP transistors are responsible for the input, while the NPN transistors are responsible for the output. The operational amplifier is used to control the output current.

The 2SD1733TLR is an important component for low frequency and medium frequency amplification. The device has a wide frequency bandwidth, ranging from 0.2 MHz to 400 MHz. Additionally, it has a high switching frequency, with a maximum of 1.8GHz. It also has a low power consumption, which is important in applications where power consumption needs to be minimized. The 2SD1733TLR also has good linearity and high gain, which makes it ideal for use in power amplifiers and amplifying applications.

The working principle of the 2SD1733TLR is based on the principles of bipolar junction transistors. It is composed of two transistors, an NPN and a PNP. The NPN transistor is the input, while the PNP transistor is the output. When the input voltage is applied to the transistor, an electrical current (Ic) flows from base to emitter, which is then amplified by the collector. The amplified current is then transferred to the output, providing an amplified voltage across the load. This amplified voltage can then be used to control the operation of a device. The 2SD1733TLR also has a wide range of voltage gain, ranging from 20 to 160.

The 2SD1733TLR can be used in a variety of applications, including power electronics, radio frequency amplification, audio products and industrial automation. In power electronics, the transistor can be used to control the power output of a power converter, while in radio frequency amplification, it can be used as an amplifier for radio frequency signals. In audio products, it can be used to amplify sound signals, while in industrial automation, it can be used to control the operation of various devices. Additionally, in automotive applications, the 2SD1733TLR can be used as a switch for controlling the operation of an on/off switch.

In summary, the 2SD1733TLR is an important component for use in a variety of applications, ranging from power electronics to radio frequency amplifcation. It is composed of two transistors, an NPN and a PNP, and its working principle is based on the principles of bipolar junction transistors. The device has a wide frequency bandwidth and a high switching frequency, and it also has a low power consumption. Additionally, it has a wide range of voltage gain, which makes it ideal for use in power amplifiers and amplifying applications.

The specific data is subject to PDF, and the above content is for reference

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