2SD1857TV2R Allicdata Electronics
Allicdata Part #:

2SD1857TV2R-ND

Manufacturer Part#:

2SD1857TV2R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN 120V 2A ATV
More Detail: Bipolar (BJT) Transistor NPN 120V 2A 80MHz 1W Thro...
DataSheet: 2SD1857TV2R datasheet2SD1857TV2R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 5V
Power - Max: 1W
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 3-SIP
Supplier Device Package: ATV
Base Part Number: 2SD1857
Description

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2SD1857TV2R Application Field and Working Principle

The 2SD1857TV2R is a single bipolar junction transistor (BJT) that is used primarily to switch or amplify current signals. As with all modern BJTs, the 2SD1857TV2R can have its voltage or current gain adjusted by adjusting the internal resistivity of its emitter-base junction. This allows the 2SD1857TV2R to serve a wide range of applications, including switching relays, analog and digital amplifiers, opto-isolators, and power supply circuits.

Operation

The 2SD1857TV2R is an npn BJT, which can have its current gain (hFE) adjusted by adjusting the resistivity of its emitter-base junction. The BJT consists of three basic regions: the emitter, collector, and base. A small current applied between the base and emitter will cause a larger current to flow between the collector and emitter.

The amount of current that flows between these two regions depends on the ratio of the resistance between the collector and emitter (or hFE). This resistance can be varied by adjusting the resistivity between the emitter-base junction. The larger the current between the base and emitter, the higher the current flowing between the collector and emitter.

Applications

The 2SD1857TV2R is used in a wide variety of applications, including power supplies, opto-isolators, switching relays, and amplifiers. It is often used in analog and digital amplifiers to provide a small but adjustable voltage or current gain that can vary depending on the application. It can also be used in switching relays to provide a predictable change in the amount of current flowing through the relay, or to provide a fast response time when switching between different circuits.

In power supplies, the 2SD1857TV2R is used as a voltage regulator. By adjusting its internal resistivity, the BJT can be used to maintain a constant voltage output, regardless of the amount of current flowing through the circuit. Finally, the 2SD1857TV2R is also used in opto-isolators to provide isolation between devices that are connected to the same voltage. This isolation helps to protect sensitive devices from electromagnetic interference, and helps maintain signal integrity.

Conclusion

The 2SD1857TV2R is a single bipolar junction transistor (BJT) that can be used for a wide variety of applications. It is used primarily for switching and amplifying current signals, and its ability to adjust the internal resistivity of its emitter-base junction makes it an ideal choice for applications that require an adjustable voltage or current gain. In addition, the 2SD1857TV2R can also be used in power supplies, opto-isolators, and switching relays to maintain a constant voltage output, provide fast response times between different circuits, and provide electromagnetic interference protection for sensitive devices.

The specific data is subject to PDF, and the above content is for reference

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