2SD1803S-TL-E

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The 2SD1803S-TL-E is a single bipolar junction transistor PNP manufactured by Torex Semiconductor Ltd. The device is designed for use in audio frequency and general purpose applications.

The transistor has a collector-base breakdown voltage (BVceo) of 80V, a collector current (Ic) of 0.4A, a minimum gain (hfe) of 60 and a power dissipation rating of 2W. It also has a long storage life with a maximum leakage current (Ices) of 2mA. The 2SD1803S-TL-E is designed for use in audio frequency and general purpose applications.

2SD1803S-TL-E Application Field and Working Principle

The 2SD1803S-TL-E is suitable for use in various applications such as audio frequency amplifiers, signal amplifiers, analog switch circuits and other various types of application. It is also suitable for use in applications that require high reliability and temperature stability.

The 2SD1803S-TL-E is a bipolar junction transistor (BJT), which is a three terminal device. The emitter is the most important terminal, as it is the source of the electrons used for current conduction. It is connected to a positive voltage to inject the electrons into the base, which then passes them on to the collector where they are drawn off as current.

The bias voltage of the collector-base junction is reversed from normal battery voltage, thus creating a negative voltage relative to the emitter. The depletion region within the collector-base junction increases with a reverse bias, reducing current flow in the transistor. This is known as reverse saturation current and is very important to BJTs.

By changing the voltage applied to the base of the 2SD1803S-TL-E, the collector current is varied. This variation in current causes the output voltage to vary proportionally to the input voltage. This allows for amplification through the transistor.

Conclusion

In conclusion, the 2SD1803S-TL-E is a general purpose single bipolar junction transistor manufactured by Torex Semiconductor Ltd. It is designed for use in audio frequency and general purpose applications. The device has a collector-base breakdown voltage of 80V, a collector current of 0.4A, a minimum gain of 60 and a power dissipation rating of 2W. By changing the voltage applied to the base of the 2SD1803S-TL-E, the collector current is varied and output voltage is proportionally varied, allowing for amplification.

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