| Allicdata Part #: | 2SD12660P-ND |
| Manufacturer Part#: |
2SD12660P |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Panasonic Electronic Components |
| Short Description: | TRANS NPN 60V 3A TO-220F |
| More Detail: | Bipolar (BJT) Transistor NPN 60V 3A 30MHz 2W Throu... |
| DataSheet: | 2SD12660P Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 3A |
| Voltage - Collector Emitter Breakdown (Max): | 60V |
| Vce Saturation (Max) @ Ib, Ic: | 1.2V @ 375mA, 3A |
| Current - Collector Cutoff (Max): | 300µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1A, 4V |
| Power - Max: | 2W |
| Frequency - Transition: | 30MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220F-A1 |
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2SD12660P, also known as “2SD12”, is a bipolar junction transistor (BJT) made of silicon. It is a single, digitally integrated device with gain stages, main amplifier, and drive amplifier. The main advantage of the 2SD12660P is its large current gain which makes it ideal for automotive, industrial and consumer applications. The current gain of the 2SD12660P is 300 or more (typical). In addition, it has a high input impedance, fast switching time, and low noise.
2SD12660P is a type of Bipolar Junction Transistor (BJT), a three-layer semiconductor device consisting of a p-type base, an n-type emitter, and an n-type collector. BJTs are commonly used in amplifiers, oscillators and switches. In this device the current gain, hfe, is high which makes it suitable for switching applications, such as in DC motor control, switches and relays. The device is also used in amplifier circuits due to its low noise, high input impedance and fast switching time.
The working principle of the 2SD12660P can be summarized as follows. When no voltage is applied to the base, the current flow through the 2SD12660P is almost zero. When a positive voltage is applied to the base, electrons are injected into the base, creating a small current flow. This current flow increases with the increasing base voltage and the 2SD12660P begins to conduct heavily. The Collector and Emitter become forward biased and current flows through the transistor. This current is proportional to the base current and can be used to form an amplifier or switch, depending on its circuit configuration.
The 2SD12660P is widely used in automotive, industrial, and consumer applications such as DC motor control, switching and relaying, amplifier circuits and related control applications. Automotive applications include systems for control of sensors, ignition systems, power windows and motors, and performance tuning. In industrial applications, it is used in industrial ovens, pumps, conveyors, and motor starters. In consumer applications, it is used in AC appliances, televisions, VCRs and DVD players. It is also used in home theater systems and audio equipment.
In conclusion, the 2SD12660P is designed to meet the needs of automotive, industrial, and consumer applications. It is a single, digitally integrated device with high hfe and low noise. The 2SD12660P is an ideal choice for applications such as DC motor control, switching and relaying, amplifier circuits and related control applications. Its large current gain and fast switching time make it suitable for a range of applications in a variety of industries.
The specific data is subject to PDF, and the above content is for reference
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2SD12660P Datasheet/PDF