Allicdata Part #: | 1014-1056-ND |
Manufacturer Part#: |
ALD114804SCL |
Price: | $ 2.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Advanced Linear Devices Inc. |
Short Description: | MOSFET 4N-CH 10.6V 16SOIC |
More Detail: | Mosfet Array 4 N-Channel, Matched Pair 10.6V 12mA,... |
DataSheet: | ALD114804SCL Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 2.36363 |
Series: | EPAD® |
Packaging: | Tube |
Part Status: | Active |
FET Type: | 4 N-Channel, Matched Pair |
FET Feature: | Depletion Mode |
Drain to Source Voltage (Vdss): | 10.6V |
Current - Continuous Drain (Id) @ 25°C: | 12mA, 3mA |
Rds On (Max) @ Id, Vgs: | 500 Ohm @ 3.6V |
Vgs(th) (Max) @ Id: | 360mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2.5pF @ 5V |
Power - Max: | 500mW |
Operating Temperature: | 0°C ~ 70°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 16-SOIC |
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The ALD114804SCL is a four-channel complementary, low-voltage, ESD-protected MOSFET array designed to operate at a maximum gate-source voltage of 5.25 V, a maximum source-drain voltage of 10 V, and a maximum gate-source current of 15 mA. The ALD114804SCL features a wide range of features suitable for many applications, including power management and wireless communication.
The ALD114804SCL offers several advantages over traditional power MOSFETs. First, the low on-resistance of each channel enables low power dissipation in applications such as battery charging and several off-state applications. Second, the design of the array prevents gate-to-source crowbar current and internal latch-up current conduction, ensuring safe operation. Third, the ALD114804SCL also offers a short switching time, making it suitable for high-speed applications such as data transfer.
The ALD114804SCL can be used in various applications. It can be used as a general-purpose power MOSFET, especially suitable for high-side switching applications. It can also be used in combination with a battery charge controller to provide intelligent charging control in portable devices such as cellular phones. In addition, the ALD114804SCL can be used as a signal switch in remote sensing applications and in wireless communication applications such as Bluetooth, Wi-Fi and low power AMP.
The working principle of the ALD114804SCL is based on the MOSFET operation. When the gate-source voltage is applied to the MOSFET, a thin insulated layer is formed between the gate and the source terminals. This thin insulated layer is known as the gate oxide. As the voltage level on the gate electrode differs from that on the source terminal, an inversion channel is formed between the gate and the source terminals. This channel then reduces the resistance between the drain and the source terminals allowing current to flow.
The ALD114804SCL incorporates a number of features designed to enhance its operation and reliability. These include a wide range of temperature protection, ESD protection, thermal protection, and a wide range of voltage protection. The device also includes a slew rate control feature, providing low EMI levels when used in power supply applications. In addition, the ALD114804SCL has a built-in error amplifier function, enabling adjustable switching voltage and current levels for optimal battery charging control.
The ALD114804SCL is suitable for a variety of applications and can operate at a wide range of voltages and temperatures. It has a wide range of protection features and is suitable for use in high-speed applications. It is also suitable for use in battery charging and data transfer applications, making it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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