AO4818BL Allicdata Electronics
Allicdata Part #:

AO4818BL-ND

Manufacturer Part#:

AO4818BL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH DUAL 30V 8SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 8A (Ta) 2W Sur...
DataSheet: AO4818BL datasheetAO4818BL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Last Time Buy
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Description

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AO4818BL is a kind of MOSFET array device produced by Alphamos Corporation. It is designed for applications like driving high speed logic which demands fast switching and low power dissipation. It has two input pins, a common drain and two output pins.

The main application of AO4818BL is for high power circuit design. It is perfectly suitable for use in circuits with high current switching requirements. AO4818BL is also often used in automotive electronic circuits, industrial power supplies and many kinds of electronic noise reduction devices that require high power switching.

The primary function of AO4818BL is to control the flow of currents. AO4818BL is completely isolated from the source voltage and drain voltage. This means it can drive both high and low voltages up to 60V, while maintaining fast switching speeds. It can switch in less than 25 nanoseconds with no power dissipation.

The working principle of AO4818BL relies on the gate capacitor of a MOSFET. When a voltage is applied to the gate of the MOSFET, a small electric field is produced. This electric field modulates the current flowing between the source and drain. By varying the gate voltage, the transporter density of the MOSFET can be efficiently adjusted.

In addition, AO4818BL offers an integrated interface called “pull down floating” which can control high speed logic. When the gate voltage is low, it will open a small connection between the source and drain and allow the current to flow even if the output voltage is suspended.

The performance of AO4818BL is further improved by its fully integrated thermal shutdown circuit. This circuit will detect excessive temperature and turn off the MOSFET array device automatically to prevent any short-circuit or overload occurrence. AO4818BL is also designed with patented charge pump technique which reduces power dissipation effectively so that the device can be used in power saving applications such as mobile phones.

From the above, it can be seen that AO4818BL MOSFET array device is mainly applied to high power circuit design and is suitable for use in high current switching circuit designs including automotive electronic circuits, industrial power supplies and electronic noise reduction devices that require high power switching. Its working principle relies on the gate capacitor of a MOSFET and is further enhanced by its thermal shutdown circuit and charge pump technique that reduces power loss.

The specific data is subject to PDF, and the above content is for reference

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