AO4862E

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AO4862E is a two high-side, N-channel enhancement-mode power MOSFET array designed for driving high-side switches in a variety of applications like battery power management, LED lighting, motor control and so on. It has maximum junction-to-ambient thermal resistance of 1.7 C/W and a maximum transistor thermal resistance of 2.5C/W. AO4862E has a wide VDS range from 20V to 30V and a maximum current ID of 13A.

AO4862E application field mainly includes battery power management, LED lighting and motor control. In battery power management, AO4862E array can efficiently reduce the size and cost of the system by combining two high-side FETs and two floating high-side voltage level shift circuits into a single device. This is helpful in extending the operating temperature range. In LED lighting and motor control, AO4862E array is suitable for driving high-side switches in applications where low sense voltage, high peak current and high switching speeds are required.

The working principle of AO4862E is simple. When a voltage is applied to the gate of the power MOSFET, it forms a conducting channel between its source and drain and source of current flows from drain to source. This channel is referred to as a drain-source channel and its width is determined by gate voltage. If gate voltage increases, channel conductivity increases. When there is no voltage, the channel is OFF and current does not flow.

AO4862E array contains two N-channel enhancement mode MOSFETs and two floating high-side voltage level shift circuits. The two high-side FETs are designed with a logic-level gate drive and an integral over-temperature protection circuit. The protection circuit is based on SenseFET\'s Antifuse Based Overtemperature Protection (ABOTP) technology, which provides high accuracy sensing with no extraneous components. The two level shift circuits ensure correct gate voltage transitions of the two FETs.

In conclusion, AO4862E is an efficient two high-side, N-channel enhancement-mode power MOSFET array. It has several applications such as battery power management, LED lighting and motor control. Its working principle is based on a drain-source channel controlled by gate voltage. It also includes two floating high-side voltage level shift circuits, and has a maximum junction-to-ambient thermal resistance of 1.7 C/W and a maximum transistor thermal resistance of 2.5C/W.

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