AOW10N65

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AOW10N65 is a type of single-channel n-type field effect transistor (MOSFET) designed for high surge voltage and current capability, manufactured and marketed by ON Semiconductor. A MOSFET is an electrical device composed of three parts, the source, drain and gate, which share the same semiconductor material. It is designed to convey electrical power between multiple points in a circuit, as well as to control the flow of current.

AOW10N65 features a 90V voltage rating of drain-source breakdown voltage, capable of handling high surge current 200mΩ max RDS-on resistance at 10V gate-source voltage, low gate charge. It can be used in a wide range of applications from automotive, industrial, lighting and power management. Due to its size, it is also suitable for a variety of other applications, such as for high-frequency and short-term power conversion systems.

In order to understand the working principle of AOW10N65, it is important to know the three elements of an MOSFET, namely the source, drain and gate. The source and drain either have a positively charged N-type semiconductor, or a negatively charged P-type semiconductor. The source and drain are connected, while the gate is insulated. The voltage present at the gate determines the flow of current between the source and the drain.

When a positive voltage is applied to the gate, electrons in the N-type semiconductor are attracted and are able to travel across the device to the source and drain. This enables the flow of current from the source to the drain. When the voltage at the gate decreases, the electrons are repelled and the flow of current through the device is reduced.

AOW10N65 features a wide gate-to-source breakdown voltage range from -4V to -8V, and a low gate threshold voltage which helps in affording the device an efficient switching operation. The 90V drain-source breakdown voltage helps in withstanding high surge currents and includes high power dissipation rate. This makes AOW10N65 suited for high power applications, due to its low on-resistance and low gate charge.

The AOW10N65 is designed to work in harsh electrical and thermal conditions and is fabricated on a monolithic silicon device. An integrated design that allows the device to well-perform in environment with high temperature, as well as having a thermal performance that permits it to reach a junction temperature of 150°C with minimal junction temperature degauss.

Finally, AOW10N65 has a variety of uses. It is most suitable for applications such as household appliance thermostats, thermally-sensitive switches, safety and security systems, automotive lighting, and automotive HVAC systems. This device also finds its application in industrial control systems, where it provides intense electrical current control. In addition, it is also used in AC-DC and DC-DC power conversion circuits for providing reliability, efficient power consumption and fast response.

In conclusion, AOW10N65 is an efficient n-type power management MOSFET device. It offers reliability, efficient power consumption, fast response and flexibility to be used in a variety of applications. With its wide gate-to-source breakdown voltage range and low gate threshold voltage, this device provides an efficient and reliable solution to challenging applications.

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