Allicdata Part #: | 785-1525-5-ND |
Manufacturer Part#: |
AOW15S65 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 650V 15A TO262 |
More Detail: | N-Channel 650V 15A (Tc) 208W (Tc) Through Hole TO-... |
DataSheet: | AOW15S65 Datasheet/PDF |
Quantity: | 1000 |
Series: | aMOS™ |
Packaging: | Tube |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 290 mOhm @ 7.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17.2nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 841pF @ 100V |
FET Feature: | -- |
Power Dissipation (Max): | 208W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-262 |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
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The AOW15S65 is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) featuring a single configuration. Generally speaking, MOSFETs are FETs (Field Effect Transistors) that utilize a metal-oxide-semiconductor instead of a traditional gate electrode to control the flow of electrons through a semiconductor material. MOSFETs are recognized for their highly-efficient current control capabilities and their higher input impedance (compared to their bipolar counterparts). The AOW15S65 is just one of many different types of MOSFETs available and its particular configuration is suited for a variety of applications, making it one of the more commonly-used types of FETs for modern electronics.
Applications
The AOW15S65 can be employed in a variety of different applications, from audio amplifers and analog switches, to voltage regulators and low-loss power supplies. Its high input impedance makes it perfect for applications that require precise control of the current flowing through a circuit, such as switching applications and interfacing with analog signals. Furthermore, due to its superior insulation characteristics, the AOW15S65 is also highly suited for use in high-voltage or high-power circuits.
Working Principle
The AOW15S65 is a single MOSFET, which means that it contains a single gate designed to control the flow of electrons through the device. The MOSFET’s gate utilizes an oxide layer to form a barrier between the gate and the drain (which is the terminal used to connect the device to the load). When a voltage is applied to the gate, it creates an electric field which forces electrons into or out of the oxide layer and onto the drain, thus controlling the flow of current through the device.
The AOW15S65 is notable for its high switching speed, low power consumption, and superior insulation characteristics. These advantages make it a suitable choice for various high-precision, as well as high-voltage and high-power, applications. Furthermore, since the device is relatively small, it can also be used in space-constrained designs.
Conclusion
The AOW15S65 is an MOSFET featuring a single configuration. It is well-suited for use in a variety of applications, from audio amplifiers and switches, to voltage regulators and low-loss power supplies. The device is also notable for its high switching speed, low power consumption, and superior insulation characteristics, making it a viable choice for both high-precision and high-voltage/power applications.
The specific data is subject to PDF, and the above content is for reference
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