Allicdata Part #: | AOW11S60-ND |
Manufacturer Part#: |
AOW11S60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 11A TO262 |
More Detail: | N-Channel 600V 11A (Tc) 178W (Tc) Through Hole TO-... |
DataSheet: | AOW11S60 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 399 mOhm @ 3.8A, 10V |
Vgs(th) (Max) @ Id: | 4.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 545pF @ 100V |
FET Feature: | -- |
Power Dissipation (Max): | 178W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-262 |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
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The AOW11S60 is a 60 Volt N-Channel MOSFET manufactured by Alpha and Omega Semiconductor. It is a planar, uni-junction, vertical DMOS power FET optimized for both analog and digital applications. This device is designed to provide high performance and superior system reliability while operating within a wide range of temperatures. The AOW11S60 is an industry leader in power semiconductor technology and is widely used in a variety of applications.
A MOSFET (metal-oxide-semiconductor field-effect transistor) is a transistor that relies on an insulative layer between the gate and channel terminals. A MOSFET acts as a switch and can be used to control the flow of electricity. In addition, a MOSFET can also be used for power management and is often used in complex integrated circuits to control power consumption and maximize energy efficiency.The AOW11S60 is a single N-Channel MOSFET which is available in a D-type package. This device features superior power dissipation ratings with a low creepage distance and low on-state resistance. It is also capable of handling high voltage and current loads up to 60V. The low on-state resistance allows it to offer superior on-state performance while keeping power dissipation low.The AOW11S60 is designed to provide superior system reliability and excellent performance in a variety of applications. It can be used in a wide range of high frequency switching, pulse power, and digital circuits. It can also be used in automotive and transportation applications, such as bus drivers, mass transit systems and vehicle power systems. The AOW11S60 is also suitable for mobile communication applications and can be used in cellular base stations and in other radio communication devices.The working principle of the AOW11S60 is based on the concept of bias voltage. When a voltage is applied to the gate of the device, an electrostatic field is formed which attracts charge carriers (electrons or holes) from the source region to the drain region. This increased current flow between the source and the drain is known as the drain-source current. The device can be used to control the which flow of current by adjusting the biasing voltage.The AOW11S60 is an ideal choice for high frequency and power applications. Its low on-state resistance coupled with a wide range of operating temperatures make it an effective switch for a variety of applications. Additionally, its excellent system reliability and superior performance make it a highly sought-after device for applications in the transportation, communications and power sectors. In conclusion, the AOW11S60 is an excellent N-Channel MOSFET and is widely used in a variety of applications. The device is capable of superior performance with a low on-state resistance and is designed to provide superior system reliability. The device is an excellent choice for high frequency and power applications and is used in a variety of sectors, such as the transportation, communications and power industries.
The specific data is subject to PDF, and the above content is for reference
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