AOW12N65

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	TO-262
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	278W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2150pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	48nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	720 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	12A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The AOW12N65 is a MOSFET in the single, discrete device category which is most commonly found in applications involving power amplifiers and pre-driven stages. It is a MOSFET transistor, meaning it is a voltage-controlled device, and is also known as a Field Effect Transistor, or FET.The AOW12N65 is an N-channel MOSFET, meaning it has an N-type conduction path and is composed of a "Source", a "Drain", and a "Gate". The N-type conduction path allows electrons to move from a potential of parabolic distribution, which can be increased with a positive gate voltage to a linear distribution. This advantage creates an ideal switching method for applications that require precise control between the source and drain of the MOSFET, such as when turning on and off an amplifier\'s power.The AOW12N65 is further classified as an enhancement mode device, meaning it has a depletion region around the gate which is highly resistive to electric current and needs to be externally charged in order to allow current to pass. This is why the AOW12N65 is used often in pre-drive stages because it is crucial to control the exact amount of current running through the MOSFET.The AOW12N65 is also ideal for use in power amplifiers. Because its operating voltage ranges from 2V-12V, the AOW12N65 can work with large input signals while avoiding the risk of damaging the device. In addition, the AOW12N65 can handle high switching frequency and has low gate charge, which are both important factors in designing a power amplifier.Another great feature of the AOW12N65 is its low on-resistance which ensures high reliability and an extremely low resistance between the Source and Drain. This feature helps reduce power loss in power amplifier applications and leads to more efficient power delivery.Overall, the AOW12N65 is an ideal device for power amplifier and pre-drive applications due to its low gate charge, low on-resistance, and its ability to handle large input signals. Furthermore, its low on-resistance helps save energy and increases the efficiency of power delivery. Therefore, the AOW12N65 is a perfect choice for designers and engineers looking for reliable, feature-rich MOSFET devices.

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