Allicdata Part #: | AOW12N60-ND |
Manufacturer Part#: |
AOW12N60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 12A TO262 |
More Detail: | N-Channel 600V 12A (Tc) 278W (Tc) Through Hole TO-... |
DataSheet: | AOW12N60 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 278W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2100pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 550 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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AOW12N60 is a N-type power MOSFET (AOW12N60) with N type surface mounted technology and high speed switching functions. This device has a low drain-source on-state resistance that makes it ideal for use in high saturated current and high voltage applications.
The AOW12N60 application field includes but is not limited to solar panels, robots, medical devices, automotive, industrial control, communications, consumer electronics, office electronics, and lighting. For example, in solar panels, the MOSFET can be used to control the flow of current from the solar panel to the power supply. In robots, it provides a way to utilize power efficiently to control the motors. In medical devices, the MOSFET is used to control the circuits of ECG machines and other medical instruments. In the automotive industry, it is widely used in engine management systems. The AOW12N60 is also widely used in the industrial control and the consumer electronics industries.
The working principle of the AOW12N60 is based on the three-terminal device structure. It consists of a source terminal, a gate terminal, and a drain terminal. The source terminal is connected to the power supply, while the gate terminal is used to control the MOSFETs conductivity. When the gate terminal is at a logical HIGH level, voltage is applied between the source and drain terminals, and electrons are then able to flow through the channel. This allows the current to flow from the drain to the source, thereby increasing the conduction of the device. When the gate voltage is at a logical LOW level, the MOSFETs channel is inhibited, and no current is able to flow through it. Thus, the AOW12N60 can be used to control the current flow.
The AOW12N60 also features a high level of efficiency in its operation. This is because it has no current leakage, allowing it to operate more efficiently than other power devices. Furthermore, it has a wide range of gate voltage levels, ensuring more flexibility in the switching process. Lastly, it is also able to handle high voltage without any degradation in performance, making it suitable for applications that require powerful and reliable switching capabilities.
To sum up, the AOW12N60 is an ideal choice for applications that require powerful, fast and reliable switching. With its low on-state resistance, high voltage tolerance, excellent efficiency, and wide range of gate voltage levels, the AOW12N60 is a highly capable device that can meet the demands of various applications. Thus, it is a perfect choice for those who require a reliable and powerful device to control current flow.
The specific data is subject to PDF, and the above content is for reference
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