Allicdata Part #: | 785-1654-5-ND |
Manufacturer Part#: |
AOW10T60P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 10A 5DFB |
More Detail: | N-Channel 600V 10A (Tc) 208W (Tc) Through Hole TO-... |
DataSheet: | AOW10T60P Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 208W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1595pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 700 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The AOW10T60P is a high-voltage, high-speed, and low-loss MOSFET that can be used for a wide range of applications. It is a single-channel device designed to reduce switching losses while increasing efficiency. The AOW10T60P is ideal for low-power and high-speed applications, such as audio amplifiers, switching power supplies, motor control, and solid-state relays.
The AOW10T60P is a enhancement mode MOSFET. It is designed to allow current flow between its drain and source terminals when a voltage is applied between the gate and source terminals. This voltage is referred to as the threshold voltage or Vth. As the voltage applied to the gate increases, the current between the source and drain increases as well. This allows for precise current control in MOSFET-based circuits.
The AOW10T60P has a maximum rating of 100V, which makes it suitable for high-voltage, as well as high-current applications. This MOSFET can be used in switching power supplies and motor control applications, where its lower RDS(ON) allows for higher efficiency and overall better performance than other types of FETs. The low-threshold voltage of this MOSFET is also beneficial in that it can be used in circuits with lower supply voltages.
The AOW10T60P also offers high-frequency performance. It is capable of switching up to 40V/ns while maintaining an RDS(ON) of 0.13. This allows it to be used in signal conditioning and signal transmission applications, where high frequencies are essential. It can also be used in audio applications thanks to its low gate charge.
The AOW10T60P is a P-channel MOSFET, meaning that it will conduct current when a negative voltage is applied to the gate terminal. This makes it ideal for low-side switching applications. It is also well-suited to applications where high-speed switching is required.
In summary, the AOW10T60P is an excellent choice for high-voltage, high-speed, and low-loss applications. It is an enhancement mode MOSFET, has a high-drain current capability, and its low-threshold voltage allows for precise current control. It is also capable of switching at high frequencies, and its P-channel design makes it suitable for low-side switching applications. With its wide range of features, the AOW10T60P is an excellent choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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