Allicdata Part #: | AOW14N50-ND |
Manufacturer Part#: |
AOW14N50 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 500V 14A TO262 |
More Detail: | N-Channel 500V 14A (Tc) 278W (Tc) Through Hole TO-... |
DataSheet: | AOW14N50 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 278W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2297pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 51nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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AOW14N50 is a P-channel enhancement-mode MOSFET that belongs to the single package MOSFET family. It is one of the newest single-package MOSFETs of the AOW14 series produced by ROHM Semiconductor. Compared to other traditional single package MOSFETs, AOW14N50 provides greater power handling capability yet dissipates less power and does not require negative gate-source voltage for sufficient current conduction. This makes AOW14N50 a preferred choice for many applications where maximum efficiency and low EMI are desired.
AOW14N50 is designed and manufactured to provide an optimized performance in a wide range of applications such as DC-DC converters, battery chargers, display power supply, portable audio devices, TVs, GPS, and other consumer and industrial electronics. Specifically, its low on-resistance and low on-voltage characteristics make it an ideal choice for high-efficiency applications and low EMI, such as those applications that are powered by small form-factor rechargeable power sources.
AOW14N50 operates in enhancement mode, meaning that an external gate-source voltage is applied to turn the transistor "on" or "off." When the gate-source voltage is positive (above the gate threshold voltage VGS(th)), the transistor is "on." As the gate-source voltage increases, the channel width also increases, resulting in a larger drain current. Conversely, when the gate-source voltage is negative, the channel width shrinks and the drain current is reduced. This polarity of voltage operation is another unique benefit of selecting AOW14N50 for an application that is powered by small form-factor rechargeable power sources.
In terms of structure, the AOW14N50 is a nFET built with a single gate N-channel MOSFET. This single-gate structure provides the AOW14N50 excellent power handling capabilities with its low gate charge due to its small footprint. The AOW14N50 is also designed with a built-in ESD protection, further helping to protect the FET from becoming damaged due to electrostatic discharge.
Due to its benefits and features, AOW14N50 provides the highest efficiency and lowest EMI in various applications compared to other traditional single package MOSFETs. Thus, it is the ideal choice for DC-DC converters, battery chargers, display power supply, portable audio devices, TVs, GPS, and other consumer and industrial electronics that require high-efficiency power handling and low EMI.
The specific data is subject to PDF, and the above content is for reference
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