Allicdata Part #: | AOW15S60-ND |
Manufacturer Part#: |
AOW15S60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 15A TO262 |
More Detail: | N-Channel 600V 15A (Tc) 208W (Tc) Through Hole TO-... |
DataSheet: | AOW15S60 Datasheet/PDF |
Quantity: | 1000 |
Series: | aMOS™ |
Packaging: | Tube |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 290 mOhm @ 7.5A, 10V |
Vgs(th) (Max) @ Id: | 3.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15.6nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 717pF @ 100V |
FET Feature: | -- |
Power Dissipation (Max): | 208W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-262 |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
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AOW15S60 is a unipolar, field-effect power transistor. It has an advanced low-restricted gate oxide enabling superior gate performance. It features high-current capability and low saturation voltage. AOW15S60 has a number of advantages over conventional power & rectifier transistors, and is widely used in power distribution and switching applications.
The AOW15S60 consists of an N-channel silicon-gate insulated-gate field-effect transistor (IGFET). It is packaged in a TO-220 resistive package with two heat-sinking surfaces. Its source and drain connections are clearly labeled to make orientation and use simpler. Its gate-source capacitance (CGS) is low, enabling faster switching response, and its drain-gate capacitance (CGG) is low, so it is better suited for high-power applications.
AOW15S60 provides excellent characteristics to meet power switching and distribution requirements. Its advanced low-restricted gate oxide enables superior performance compared to conventional power and rectifier transistors. Its high-current capability and low saturation voltage make it particularly suitable for switching and power conversion applications.
The operating principle of the AOW15S60 is based on the same transistors that are used for digital integrated circuits, but there are several differences. The AOW15S60 is a power transistor, and has been designed for use in situations where large amounts of power must be controlled, including motors, power supplies, and audio circuits.
The AOW15S60 operates by having a gate voltage, known as VGS, applied to its gate terminal. When the gate voltage exceeds the threshold, or “turn on” voltage, the device conducts current in the source to drain direction. This is known as “ON state.” The amount of current that the AOW15S60 can conduct is limited by two parameters: gate-to-source voltage and drain-to-source voltage.
The gate-to-source voltage, known as “VGS” must be regulated to keep the device operating within its safe range. The device operates in the "ON" state when a voltage greater than the threshold voltage is applied to the gate-to-source terminal. The drain-to-source voltage, known as "VDS" defines the amount of current that the transistor can sustain without saturation. The higher the VDS voltage, the higher the output current that the device can sustain.
The AOW15S60 is an ideal alternative to conventional power and rectifier transistors such as thyristors, and is increasingly used in many application areas, such as power switching, power conversion, motor control, and audio circuits. Its high-current capability, low-saturation voltage, and low-restricted gate oxide enable superior performance and greater energy efficiency in switching applications.
The specific data is subject to PDF, and the above content is for reference
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