Allicdata Part #: | APT150GN120J-ND |
Manufacturer Part#: |
APT150GN120J |
Price: | $ 27.94 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 1200V 215A 625W SOT227 |
More Detail: | IGBT Module Trench Field Stop Single 1200V 215A 62... |
DataSheet: | APT150GN120J Datasheet/PDF |
Quantity: | 28 |
1 +: | $ 25.40790 |
10 +: | $ 23.75730 |
25 +: | $ 21.97190 |
100 +: | $ 20.59860 |
250 +: | $ 19.22540 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 215A |
Power - Max: | 625W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 150A |
Current - Collector Cutoff (Max): | 100µA |
Input Capacitance (Cies) @ Vce: | 9.5nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | ISOTOP |
Supplier Device Package: | ISOTOP® |
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Transistors - IGBTs - Modules - APT150GN120J Application field and Working Principle
The APT150GN120J IGBT Module is a high-performance insulated gate bipolar transistor (IGBT) module designed for use in applications that require high power density and reliability. It combines a field-stop insulated gate bipolar transistor (IGBT) and fast-recovery diode (FRD) in a package that is rated for up to 150A peak and 120J junction temperatures. The IGBT module also features low Vce(sat) characteristics, allowing applications to switch quickly, thus providing improved power efficiency. The module is also capable of withstanding high power surge loading and EMI interference.
Application Fields
APT150GN120J can be employed in a wide range of application fields, such as DC motor drives, uninterruptible power supply (UPS), appliance motor drive applications, welding power supply and variable speed drives. The device’s robust construction, fast switching speed, ultra-low on-state voltage up to ~600V and high power capability makes it a suitable candidate for these types of applications.
Working Principle
The principle of operation of the APT150GN120J IGBT module is based on two main components: a field-stop IGBT and a fast-recovery diode (FRD). The field-stop IGBT features an insulated gate, which is connected to the emitter-gate junction and is also able to store an electric charge. This electric charge is then used to switch the device into an on-state, when the gate voltage falls below the breakdown voltage. When this occurs, current is allowed to flow through the device, allowing the gate to be charged up again.
The second component of the APT150GN120J IGBT module is the fast-recovery diode, which is responsible for providing the current needed to recharge the gate prior to the next on-state. The diode is designed to provide a high-rate of current that can quickly recharge the gate and prevent any overshoot. This ensures that the device can continue to operate in a reliable manner over long periods of time.
Conclusion
The APT150GN120J IGBT module is an ideal device for applications that require high power density, reliability and fast switching speeds. The two components of the module, the field-stop IGBT and fast-recovery diode, work together to ensure that the device can operate reliably over long periods of time. The device is suitable for a wide range of applications, including DC motor drives, UPS, appliance motor drive applications, welding power supply and variable speed drives.
The specific data is subject to PDF, and the above content is for reference
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