| Allicdata Part #: | APT100M50J-ND |
| Manufacturer Part#: |
APT100M50J |
| Price: | $ 29.64 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | MOSFET N-CH 500V 100A SOT-227 |
| More Detail: | N-Channel 500V 103A (Tc) 960W (Tc) Chassis Mount S... |
| DataSheet: |  APT100M50J Datasheet/PDF |
| Quantity: | 1000 |
| 20 +: | $ 26.93660 |
| Vgs(th) (Max) @ Id: | 5V @ 5mA |
| Package / Case: | SOT-227-4, miniBLOC |
| Supplier Device Package: | SOT-227 |
| Mounting Type: | Chassis Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 960W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 24600pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 620nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 38 mOhm @ 75A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 103A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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APT100M50J is a 100V, N-channel MOSFET module that was designed for use in high-frequency switching applications. The device is also a very useful component in power supply applications, as it can provide high-current switching capability with low on-resistance and high-frequency capability.
The APT100M50J is a DMOSFET that offers excellent performance in high-frequency switching applications due to its low on-resistance and high-frequency capability. Additionally, its DMOSFET structure reduces switching losses due to its lower drive voltage and gate capacitance.
The primary application field for the APT100M50J is high-frequency switching applications. Due to its low on-resistance and high-frequency capability, the device is ideal for applications such as power line conditioners, high-frequency power amplifiers, and other high-frequency switching applications. Additionally, the device is suitable for use in power supply applications where high-current switching capability is required.
The working principle of the APT100M50J is based on an N-channel MOSFET structure. The device consists of a silicon transistor with an insulated region between the source and drain, known as the gate. A voltage applied to the gate will cause a current to flow from the source to the drain, with the amount of current determined by the voltage applied to the gate.
The APT100M50J utilizes an N-channel MOSFET to deliver high-current switch capability with low on-resistance and high-frequency capability. Additionally, the DMOSFET structure used in the device reduces switching losses due to its lower drive voltage and gate capacitance. This feature makes the device ideal for applications such as power line conditioners, high-frequency power amplifiers, and other high-frequency switching applications.
In conclusion, the APT100M50J is a 100V, N-channel MOSFET module that was designed for use in high-frequency switching applications. The device utilizes an N-channel MOSFET to deliver high-current switch capability with low on-resistance and high-frequency capability. Additionally, the DMOSFET structure used in the device reduces switching losses due to its lower drive voltage and gate capacitance. This feature makes the device ideal for applications such as power line conditioners, high-frequency power amplifiers, and other high-frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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