Allicdata Part #: | APT130SM70J-ND |
Manufacturer Part#: |
APT130SM70J |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 700V SOT227 |
More Detail: | N-Channel 700V 78A (Tc) 273W (Tc) Chassis Mount IS... |
DataSheet: | APT130SM70J Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.4V @ 1mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | ISOTOP® |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 273W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3950pF @ 700V |
Vgs (Max): | +25V, -10V |
Gate Charge (Qg) (Max) @ Vgs: | 270nC @ 20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 60A, 20V |
Drive Voltage (Max Rds On, Min Rds On): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 78A (Tc) |
Drain to Source Voltage (Vdss): | 700V |
Technology: | SiCFET (Silicon Carbide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The APT130SM70J is a power MOSFET that focuses on providing an effective and efficient control of current in various application fields. It is a single-channel N-type MOSFET that has a drain source breakdown voltage (BVDSS) of 130V and a gate threshold voltage (VGS) of 8.2V. The power MOSFET is suitable for use in a wide variety of fields ranging from automotive to domestic appliances and it has a 0.8W/ºC thermal resistance. With its low gate threshold voltage, it is suitable for resistive load, PWM and other power devices.
The APT130SM70J is mainly used in automotive and general DC-to-DC audio-visual equipment, and in the switches of devices such as UV radiation lamps and room air conditioners. It can also be used for any type of DC-to-DC converter, especially where current control is needed. Some examples include LED lighting systems, motor-drive systems, switching power supplies, and even solar and wind power energy systems. In such systems, the MOSFET requires an accurately regulated voltage source, otherwise it could easily burn out over time or cause interference.
The working principle of the APT130SM70J is based on the conduction capabilities of its built-in N-Channel MOSFET. The MOSFET is capable of controlling current within a specific range by determining the amount of voltage that is applied to its gate. When more voltage is applied to its gate, more current is allowed to flow through it, thereby increasing the amount of power that can be controlled. The MOSFET also acts as a switch that can be used to turn a current on or off.
The APT130SM70J is designed to switch faster and consume less power compared to a conventional bipolar junction transistor (BJT). This is due to its superior switching performance, characterized by its reduced gate capacitance. Another notable advantage of the APT130SM70J is that it has a low drain-source on-state resistance (RDS(on)). This ensures maximum efficiency as power loss is minimized due to its low RDS(on) value. It also features an impressive drain-source voltage (VDSS) of 130V that allows it to switch at higher load currents.
In summary, the APT130SM70J is an effective power MOSFET designed for current control in a variety of applications. It has a low gate threshold voltage and its low switch resistance keeps power loss to a minimum. The device also has an impressive VDSS of 130V, making it suitable for switching at higher load currents. It is suitable for use in a range of automotive, general DC-to-DC audio-visual equipment, LED lighting systems, and other DC-to-DC converter devices.
The specific data is subject to PDF, and the above content is for reference
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