APT10090BLLG Allicdata Electronics
Allicdata Part #:

APT10090BLLG-ND

Manufacturer Part#:

APT10090BLLG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 1000V 12A TO-247
More Detail: N-Channel 1000V 12A (Tc) 298W (Tc) Through Hole TO...
DataSheet: APT10090BLLG datasheetAPT10090BLLG Datasheet/PDF
Quantity: 79
Stock 79Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 1mA
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 298W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1969pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
Series: POWER MOS 7®
Rds On (Max) @ Id, Vgs: 950 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The APT10090BLLG is a high-performance single N-Channel Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). It is designed for use in high-speed switching and linear amplification applications.

The APT10090BLLG features a unique combination of extremely low gate-lag voltage, high transconductance, low on-state resistance, and low noise. Its output characteristics are also excellent, making it an ideal choice for applications where high-speed switching and linear amplification are required. The N-channel MOSFET also provides good stability and improved thermal performance.

The APT10090BLLG utilizes a N-channel MOSFET structure, which features an insulated gate that is connected to a source terminal. The MOSFET operates by using an electrical current that passes through the gate and creates an electric field in the channel. This electric field generates a flow of electrons between the source and drain. The resulting current can be controlled by the voltage applied to the gate.

Typical applications for the APT10090BLLG include power management circuits, inverters, DC/DC converters, voltage regulators, and power switching circuits. It is also suitable for audio amplifiers, telecom switching equipment, and high-voltage rectifier circuits. Since the APT10090BLLG has an ultra low input capacitance, it is an ideal choice for high-speed switching applications.

The APT10090BLLG is a highly reliable transistor. It is designed with an ESD protection rating to provide superior reliability and performance in high-frequency and high-voltage switching environments. It also features a soft-start limit to prevent excessive in-rush currents during start-up or when the device is switched on. Moreover, the APT10090BLLG provides superior thermal performance, which ensures that it can operate at its specified nominal temperatures without degrading its performance.

In summary, the APT10090BLLG is a high-performance single N-Channel Metal-Oxide-Semiconductor Field Effect Transistor designed for use in high-speed switching and linear amplification applications. It offers a combination of low gate-lag voltage, high transconductance, low on-state resistance, low noise and excellent output characteristics. Moreover, the APT10090BLLG is designed with an ESD protection rating, a soft-start limit, and superior thermal performance, making it reliable and suitable for high-frequency and high-voltage switching applications.

The specific data is subject to PDF, and the above content is for reference

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