APT17F100S Allicdata Electronics
Allicdata Part #:

APT17F100S-ND

Manufacturer Part#:

APT17F100S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 1000V 17A D3PAK
More Detail: N-Channel 1000V 17A (Tc) 625W (Tc) Surface Mount D...
DataSheet: APT17F100S datasheetAPT17F100S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 1mA
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: D3Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 625W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4845pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Series: POWER MOS 8™
Rds On (Max) @ Id, Vgs: 780 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The APT17F100S is a single n-channel field effect transistor (FET) suitable for various types of switching and analog applications. It is a conventional FET constructed with a junction of n-type materials, with a three-terminal design consisting of the source, gate and drain terminals. The APT17F100S can be used in both digital and analog circuits, and offers low on-resistance and high-speed switching characteristics. This makes it an ideal choice for circuits requiring precise control of electrical signals.

The operation of the APT17F100S relies on the ability of an electric field produced by the metal gate to control the conductivity of the semiconductor channel between the source and drain. When the gate voltage is positive relative to the source, the channel is forward biased and forms a conducting path, allowing current to flow from source to drain. Conversely, if the gate voltage is negative relative to the source, the channel is reverse biased and acts as an insulation, preventing current flow.

The APT17F100S can be used in a variety of different applications, ranging from analog circuits such as frequency control and signal switching, to digital circuits such as logic gates and voltage regulators. It is also often used in power management functions such as power supply sequencing, overcurrent protection and current limiting. It is well suited for use in high-speed switching systems, as its low on-state resistance and fast switching speed allow for more efficient operation.

The APT17F100S is designed with a drain-source breakdown voltage of 17V, making it suitable for many types of electronic equipment. Its gate capacitance is approximately 100 pF, and its maximum drain current is 17A, giving it desirable power-handling characteristics. Its gate threshold voltage is -3V and gate resistance is 5Ω, making it suitable for low power consumption applications.

In summary, the APT17F100S is an excellent choice of FET for a wide range of applications. Its low on-resistance and high-speed switching capability make it ideal for switching and analog systems, while its power-handling capabilities and breakdown voltage make it suitable for power management systems. It is also capable of operating at very low gate voltages, making it suitable for low-power applications. Its versatility and reliable performance make it a popular choice for many types of electronic systems.

The specific data is subject to PDF, and the above content is for reference

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