Allicdata Part #: | APT14M100S-ND |
Manufacturer Part#: |
APT14M100S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 1000V 14A D3PAK |
More Detail: | N-Channel 1000V 14A (Tc) 500W (Tc) Surface Mount D... |
DataSheet: | APT14M100S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D3Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3965pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Series: | POWER MOS 8™ |
Rds On (Max) @ Id, Vgs: | 880 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Bulk |
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The APT14M100S is an advanced, high-voltage, high-power MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor) ideal for a variety of applications. Due to its superior performance and superior switching behavior, the APT14M100S is an excellent choice for power conditioning, power factor correction, UPS systems and various power management applications.
The APT14M100S is a single, high-voltage MOSFET device, featuring an advanced trench MOSFET structure that provides superior switching performance and excellent current carrying capacity.
The APT14M100S utilizes a deeply etched, single-layer epitaxial structure which minimizes contact resistance and reduces junction-to-substrate capacitance. This allows the APT14M100S to deliver superior switching performance, with higher switching speed, lower switching losses, and better thermal stability. Additionally, due to the highly advanced design of the APT14M100S, it is able to support an extremely wide operating temperature range, up to 150°C. This makes the APT14M100S well-suited for use in even the most extreme temperature environments.
The primary application field for the APT14M100S is for power conversion and conditioning, specifically for applications that require fast, high-efficiency and high-power switches. The APT14M100S is well suited for use in power factor correction, phase control and uninterruptible power supply systems. Other applications include motor drives, solar panel inverters, and electric vehicle charging systems.
The APT14M100S works by the principle of minority carrier injection. Minority carriers are injected into the gate to turn "on" the devices. This is achieved by applying a voltage pulse to the device gate, creating a field-effect that in turn allows current to flow through the channels. This can create a fast, low-impedance, high-power MOSFET switch.
The APT14M100S features a variety of different protection functions, such as over-voltage protection, over-temperature protection, latch-up protection, and too large on-resistance protection. These features make the APT14M100S an excellent choice for high-voltage, high-power applications, as it is able to provide protection from gate-induced noise, thermal runaway and safe operation.
The APT14M100S is an advanced, high-voltage, high-power MOSFET device which is ideal for use in a number of power conversion and conditioning applications. Its single, high-voltage MOSFET structure enables superior switching performance, excellent current carrying capacity, and improved reliability and thermal stability. Additionally, the APT14M100S is protected from several potential dangers, due to its various protection functions. For these reasons, the APT14M100S is an excellent choice for high-voltage, high-power applications.
The specific data is subject to PDF, and the above content is for reference
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