APT19M120J

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The APT19M120J is an enhancement-mode power MOSFET designed for use in high-side switching and high power applications. This component is also known as a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and is a voltage-controlled component which amplifies electric current. This component is used primarily in fields such as motor control, robotics, and automation.

In general, MOSFETs are semiconductor devices which are used to control current by creating a channel between its drain and source terminals with the help of a voltage applied between its gate and source terminals. A MOSFET operates by capacitively coupling its gate and source terminals through an oxide layer, creating an insulated gate field-effect transistor.

The APT19M120J is a single N-channel enhancement-mode MOSFET. The APT19M120J is designed for efficient switching in high-side applications, where it can switch a large amount of current between the source and drain. The APT19M120J has a maximum on-state resistance of 1.81 ohms and can withstand up to 20 volts of constant drain-source voltage. In addition, the APT19M120J has a drain-source breakdown voltage of 180 volts and a maximum power dissipation of 300 watts.

The APT19M120J is a reliable and efficient component which offers a wide variety of advantages over other types of power MOSFETs. The APT19M120J has a low gate-source capacitance, ensuring high switching speeds. In addition, the device has an extended temperature range of -55 °C to 150 °C, providing improved reliability and durability. In addition, the APT19M120J also offers improved noise immunity and ESD protection.

The APT19M120J\'s working principle is based on the so-called "charge-flux capacitance" effect. This effect occurs when electric charge is transferred between two regions which are at different levels of voltage. When a voltage is applied to the gate and source terminals of the APT19M120J, the electric charge flows from the gate to the drain terminal and creates a electric field between the gate and the drain and the source. This electric field increases the conductivity of the channel between the drain and the source. When the voltage applied to the gate terminal is removed, the electric field is reduced and the conductivity of the channel is decreased, resulting in the MOSFET turning off.

The APT19M120J is a reliable and efficient MOSFET which is suitable for use in high-side switching and high power applications, such as motor control, robotics, and automation. The device is capable of efficient switching with a low on-state resistance and extended temperature range. The APT19M120J\'s working principle is based on the charge-flux capacitance effect, which allows it to accurately and reliably control current.

The specific data is subject to PDF, and the above content is for reference