APT17F80S Allicdata Electronics
Allicdata Part #:

APT17F80S-ND

Manufacturer Part#:

APT17F80S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 800V 18A D3PAK
More Detail: N-Channel 800V 18A (Tc) 500W (Tc) Surface Mount D3...
DataSheet: APT17F80S datasheetAPT17F80S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 1mA
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: D3Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3757pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
Series: POWER MOS 8™
Rds On (Max) @ Id, Vgs: 580 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The APT17F80S is a Standard Power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is designed to be used in applications where high voltage and low resistance are necessary. There are many applications that take advantage of the properties of power MOSFETs, such as automotive and industrial applications. The APT17F80S is widely used and is known for its excellent performance.

The APT17F80S is a single P-Channel MOSFET device. It has a maximum Drain-Source Voltage of 80V and a drain current of up to 17A. The maximum Drain-Source On-resistance (Rdson) is extremely low at just 1.2mΩ. The maximum Gate-Source Voltage (VGS) is 20V, making it suitable for many higher voltage applications. The device also has a maximum Safe Operating Area (SOA) of 2.9V, meaning it can be operated safely at relatively high temperatures and current levels. The device also has a low minimum Gate-Source Voltage of just 4.5V, making it suitable for a number of low-voltage applications. Finally, the device has a maximum operating temperature range of 150°C, and can safely operate in temperatures of up to 175°C.

The working principle of the APT17F80S is very simple and is based on the fact that power MOSFETs are voltage-activated devices. When a voltage is applied to the Gate-Source of the device, the electric field produced causes electrons to be attracted towards the Gate-Source and gather together near the Gate region. This reduces the resistance between the Drain and Source, thus allowing current to pass through. When the voltage is removed, the electrons are no longer attracted to the Gate-Source, thus reducing the resistance and stopping the current from passing through.

The APT17F80S can be used in many different applications. Its low Rdson and wide operating temperature range make it ideal for automotive applications, such as in electric vehicles, where low resistance and high power density are essential. It can also be used in industrial applications, such as motor control, where low power consumption and reliable operation are necessary. Finally, it can be used in consumer applications, such as home appliances and portable devices, where low energy consumption and long battery life are important.

In conclusion, the APT17F80S is a Standard Power MOSFET that is designed for use in applications where high voltage and low resistance are necessary. It has a maximum Drain-Source Voltage of 80V, a maximum drain current of 17A, and a maximum Rdson of 1.2mΩ. Its wide operating temperature range and low Gate-Source Voltage make it suitable for a variety of applications. The working principle of the APT17F80S is based on the fact that power MOSFETs are voltage-activated devices, and it is commonly used in automotive, industrial, and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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