Allicdata Part #: | APT12067B2LLG-ND |
Manufacturer Part#: |
APT12067B2LLG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 1200V 18A T-MAX |
More Detail: | N-Channel 1200V 18A (Tc) 565W (Tc) Through Hole T-... |
DataSheet: | APT12067B2LLG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Package / Case: | TO-247-3 Variant |
Supplier Device Package: | T-MAX™ [B2] |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 565W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4420pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Series: | POWER MOS 7® |
Rds On (Max) @ Id, Vgs: | 670 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 1200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Bulk |
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The APT12067B2LLG is a single N-channel enhancement mode power MOSFET that is available in a compact, industrial grade packaging for applications requiring a high degree of reliability. The device features excellent switching characteristics, low on-resistance, and low gate charge for superior performance. The device is designed for use in applications including motor drives, lighting and switch mode power supplies.
APT12067B2LLG Features and Benefits
The APT12067B2LLG offers a number of features and benefits to its users:
- Low On-resistance: The device\'s low on-resistance makes it ideal for switching applications that require as little power dissipation as possible.
- Optimized Gate Charge: The optimized gate charge minimizes switching times for faster control and improved system efficiency.
- Direct Operating Voltage: The device has a low operating voltage of 6V, making it ideal for a variety of consumer and industrial applications.
- Robust Packaging: The device is available in a industrial grade packaging for applications requiring a high degree of reliability.
APT12067B2LLG Applications
The device is designed for use in a wide range of applications including:
- Motor Drives
- Lighting Applications
- Switch Mode Power Supplies
- Power Management Systems
- Telecommunications
- Industrial Control Systems
APT12067B2LLG Working Principle
The APT12067B2LLG is a single N-channel enhancement mode power MOSFET, which consists of a channel of silicon sandwiched between a source and a drain. This channel is surrounded by a gate electrode which is used to control the conductivity of the channel. When voltage is applied to the gate electrode, it causes the channel to allow current to flow and the MOSFET to switch on.
The device is functioning in enhancement mode, so no voltage is required to keep the MOSFET on. Once the gate voltage is removed, the channel will remain conductive, resulting in a low On-resistance across the channel. This allows the device to be used in applications requiring fast switching times, low power dissipation and high efficiency.
The APT12067B2LLG also features a low gate charge and a low operating voltage of 6V, making it ideal for a variety of consumer and industrial applications.
Conclusion
The APT12067B2LLG is a single N-channel enhancement mode power MOSFET that offers excellent switching characteristics and low on-resistance for superior performance. The device is designed for use in applications including motor drives, lighting and switch mode power supplies due to its excellent features. The device also features a low gate charge and a low operating voltage of 6V, making it ideal for consumer and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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