Allicdata Part #: | APT18F60S-ND |
Manufacturer Part#: |
APT18F60S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 600V 19A D3PAK |
More Detail: | N-Channel 600V 19A (Tc) 335W (Tc) Surface Mount D3... |
DataSheet: | APT18F60S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | D3Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 335W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3550pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
Series: | POWER MOS 8™ |
Rds On (Max) @ Id, Vgs: | 370 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The APT18F60S is a power field-effect transistor (power FET) specifically designed for high-quality, high-power applications. It is one of the latest advances in power FET technology and can be used for power amplification, power switching, and other linear and switching applications.
APT18F60S has an internal structure that combines an N-channel junction FET with a p-channel junction FET internally. It utilizes the robust structure of the junction FET to provide superior power handling capabilities. The two FETs are connected in parallel, so the transfer characteristics are very linear over the entire frequency range.
The device also features an on Resistance of only 0.6Ω and a drain-source breakdown voltage of 60V. It is rated for a maximum power dissipation of 28W and is rated for a junction temperature of 150°C. The device also features a fast switching speed and can handle up to 10A at 25V.
APT18F60S is designed to be used in a variety of linear and switching applications. It can be used for power amplification, power switching, and for other linear and switching applications. It is particularly useful for applications where low on-resistance and high power dissipation are required such as switch mode power supplies and DC-DC converters.
APT18F60S has many advantages including its fast switching speed and low on-resistance. It is reliable and robust, and also consumes very low quiescent current. In addition, it can be used in a variety of applications, making it very versatile. It also has a high power dissipation capability, making it ideal for applications where high power is required.
In terms of its working principle, APT18F60S is a voltage-controlled FET. When a voltage is applied between its gate and the source, the current flows between its drain and the source. The magnitude of the current is determined by the applied voltage. As the voltage is increased, the current flow increases, and vice versa.
The APT18F60S is a very reliable and efficient power FET, and it is well-suited for a variety of applications. Its fast switching speed and low on-resistance make it very useful for applications such as switch mode power supplies and DC-DC converters. In addition, its high power dissipation capability make it ideal for applications that require high power. It is also very reliable and robust, and consumes very little quiescent current.
The specific data is subject to PDF, and the above content is for reference
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