Allicdata Part #: | APT14F100S-ND |
Manufacturer Part#: |
APT14F100S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 1000V 14A D3PAK |
More Detail: | N-Channel 1000V 14A (Tc) 500W (Tc) Surface Mount D... |
DataSheet: | APT14F100S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Supplier Device Package: | D3Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3965pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Series: | POWER MOS 8™ |
Rds On (Max) @ Id, Vgs: | 980 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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APT14F100S is a transistor that belongs to the category of FETs, MOSFETs, single. It is used in a wide range of applications, including power control and switching, digital circuits, and audio-visual amplifiers. This type of transistor has an advantage over other types of transistors in that it can be operated at higher voltages and power levels, while still providing good noise immunity and extremely small on-resistance. In addition, it is relatively inexpensive to manufacture.
Application Field
APT14F100S can be used in a variety of applications, including power control and switching, digital circuits, and audio-visual amplifiers. This type of transistor is particularly suitable for use in switching power supplies, inverters, and battery charging circuit control. It is also used in motor control, relay control, automotive electronics, and other equipment. In addition, this type of transistor can be used in circuit designs that require low on-resistance and low noise.
Working Principle
The APT14F100S is a MOSFET transistor with a JFET-style configuration. It is designed for efficient power conversion, as it has a low “on” resistance and a high “off” voltage. The APT14F100S contains a drain, gate, and source, which form the key components of a MOSFET. The drain and gate are connected to the source by the gate oxide layer, which is the insulating layer surrounding the gate. This layer creates a channel between the source and the drain, which is controlled by the amount of voltage applied to the gate. When a positive voltage is applied to the gate, the channel is opened and current can flow through the drain and source. However, when a negative voltage is applied, the gate oxide layer collapses, closing the channel and preventing the current flow.
The APT14F100S also features an integral diode, which is used to protect the MOSFET from high reverse voltages. The diode prevents the current from flowing in the opposite direction, which could damage the MOSFET’s junction. In addition, this transistor also features a high-frequency parasitic inductance, which can help to reduce switching losses. As a result, APT14F100S is an ideal candidate for high-frequency switching applications.
In summary, the APT14F100S is a low-cost transistor that is suitable for a wide range of applications, including power control, digital circuits, and audio-visual amplifiers. It has an efficient power conversion capability and is protected by a diode for reverse voltage protection. The high-frequency parasitic inductance of the device reduces switching losses, enabling it to be used in high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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