Allicdata Part #: | APT20GN60BDQ1G-ND |
Manufacturer Part#: |
APT20GN60BDQ1G |
Price: | $ 2.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 600V 40A 136W TO247 |
More Detail: | IGBT Trench Field Stop 600V 40A 136W Through Hole ... |
DataSheet: | APT20GN60BDQ1G Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
150 +: | $ 2.30996 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 40A |
Current - Collector Pulsed (Icm): | 60A |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 20A |
Power - Max: | 136W |
Switching Energy: | 230µJ (on), 580µJ (off) |
Input Type: | Standard |
Gate Charge: | 120nC |
Td (on/off) @ 25°C: | 9ns/140ns |
Test Condition: | 400V, 20A, 4.3 Ohm, 15V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 [B] |
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The APT20GN60BDQ1G is a Single IGBT transistor typically used in a wide variety of applications. One of it’s most advantageous properties is its ability to switch quickly between states, making it useful in high frequency applications.
The APT20GN60BDQ1G is an N-channel IGBT transistor. It is composed of a layered structure of alternating N- and P-type doped semiconductor layers, which form an insulated gate structure. The gate terminal is used to control the flow of current between the emitter and collector regions.
The APT20GN60BDQ1G is capable of handling voltages of up to 600V and currents of up to 20A, making it suitable for a variety of applications including automotive, industrial, and home appliance electronics. The inverter gate, collector-emitter breakdown voltage, and voltage between gate-emitter, have all been improved from earlier Single IGBTs, allowing for better performance and more efficient operation.
The main application fields for the APT20GN60BDQ1G are power conversion, motor control, and inverter circuits. It is commonly used in low-frequency and high switching frequency applications such as portable power tools, battery powered equipment, and power factor correction circuits. In motor control systems, the APT20GN60BDQ1G is used for speed control, current control, and AC and DC motor drive applications.
The APT20GN60BDQ1G has a low switching loss, making it suitable for use in high-frequency inverter applications. It is also capable of withstanding high voltage transients due to its built-in transient voltage suppression diode. This means the transistor is suitable for use in harsh environments where there is the possibility of frequent high-voltage transients.
In terms of working principle, the APT20GN60BDQ1G works by controlling the voltage applied to the insulated gate. When a positive voltage is applied to the gate, electrons are pulled away from the N-type material, allowing current to flow from the collector to the emitter. When the voltage applied to the gate is negative, the electrons are pushed away, preventing current from flowing from the collector to the emitter.
The APT20GN60BDQ1G is a reliable and efficient Single IGBT transistor suitable for a variety of applications. It’s easy to use, low switching loss makes it ideal for high-frequency applications, and its ability to withstand high voltage transients makes it suitable for harsh environments.
The specific data is subject to PDF, and the above content is for reference
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