APT25GR120S Allicdata Electronics
Allicdata Part #:

APT25GR120S-ND

Manufacturer Part#:

APT25GR120S

Price: $ 5.89
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT 1200V 75A 521W D3PAK
More Detail: IGBT NPT 1200V 75A 521W Surface Mount D3Pak
DataSheet: APT25GR120S datasheetAPT25GR120S Datasheet/PDF
Quantity: 2
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 5.34870
10 +: $ 4.81257
25 +: $ 4.38480
100 +: $ 3.95697
250 +: $ 3.63611
500 +: $ 3.31528
1000 +: $ 2.88751
Stock 2Can Ship Immediately
$ 5.89
Specifications
Series: --
Packaging: Bulk 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Power - Max: 521W
Switching Energy: 742µJ (on), 427µJ (off)
Input Type: Standard
Gate Charge: 203nC
Td (on/off) @ 25°C: 16ns/122ns
Test Condition: 600V, 25A, 4.3 Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: D3Pak
Description

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The APT25GR120S is an insulated gate bipolar transistor (IGBT) that offers a variety of benefits, including high immunity to dv and dt disturbances, minimum power and load losses, gate drive compatibility, and high frequency operation. It is designed for applications requiring synchronous rectification, such as switched-mode power supplies, active filtering, motor drives, and solar inverters. The APT25GR120S also features a low output capacitance, low V CE saturation, and high commutation speed.

The APT25GR120S IGBT is a single device designed for use in a variety of power electronics applications. It is composed of two N-type silicon layers and one P-type silicon layer. The negative layer is called the emitter and the positive layer is called the collector. When a voltage is applied to the gate, it creates an inversion between the emitter and collector, allowing current to flow between them.

The APT25GR120S has a wide range of applications, including motor drives, motor controls, power converters, power factor correction, and active filtering. It is also often used in switch-mode power supplies, solar inverters, and ac–dc converters, where it provides high performance and improved efficiency. In motor drives, it is especially useful for application requiring high switching frequencies and high current ratings.

The working principle of the APT25GR120S is based on its ability to control current flow between its collector and emitter layers. When a voltage is applied to the gate, a large current flows through the device, disrupting the balance between the collector and emitter, allowing current to flow between them. This inversion creates a low resistance channel between the emitter and collector, allowing current to flow. The application of a positive voltage on the gate reduces the resistance between the two layers, while a negative voltage increases it. This enables the device to vary the amount of current passing through it.

The APT25GR120S is an ideal device for applications requiring high frequency operation, high switching speed, and low losses. Its low output capacitance and low V CE saturation make it suitable for applications where a very high degree of accuracy is required. Its gate drive compatibility also allows for easier design and integration of driver circuitry.

The APT25GR120S is a single IGBT that provides power electronics professionals with a reliable and efficient solution for applications requiring high speed switching, low power losses, and advanced protection from dv and dt disturbances. The device offers excellent power efficiency and commutation capabilities, while its gate drive compatibility and high frequency operation make it an ideal choice for many power electronics applications.

The specific data is subject to PDF, and the above content is for reference

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