APT25GR120BSCD10

Switching Energy:	434µJ (on), 466µJ (off)
Supplier Device Package:	TO-247
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	600V, 25A, 4.3 Ohm, 15V
Td (on/off) @ 25°C:	16ns/122ns
Gate Charge:	203nC
Input Type:	Standard
Series:	--
Power - Max:	521W
Vce(on) (Max) @ Vge, Ic:	3.2V @ 15V, 25A
Current - Collector Pulsed (Icm):	100A
Current - Collector (Ic) (Max):	75A
Voltage - Collector Emitter Breakdown (Max):	1200V
IGBT Type:	NPT
Part Status:	Obsolete
Packaging:	Tube

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Introduction

APT25GR120BSCD10 is a field-stop insulated-gate bipolar transistor (IGBT), which is classified as a single IGBT. IGBTs are three-terminal power switching devices in which an insulated gate controls the flow of current between collector (high-current side) and emitter (low-current side). Compared to traditional transistors, an IGBT offers advantageous characteristics such as high-temperature operation, high reliability, low switching losses and low noise, making them ideal for a variety of applications. This article will explore the application field and working principle of APT25GR120BSCD10.

Application Field

APT25GR120BSCD10 is commonly used for general motor drive applications, such as for air-conditioners and home appliances, as well as in consumer electronics and power tools. Since this IGBT has an isolation voltage (Vceo) of 1200V, it is also suitable for high-voltage applications in industries such as plug-in molding, paper converting, and coil winding machines.APT25GR120BSCD10 is an ideal choice for AC & DC traction motor drive, street carriage and renewable energy such as wind power or solar energy systems. It is a reliable device for high-power motor drive applications, due to its high working temperature and good switching performance, which results in a low conduction and switching loss.This IGBT also has the ability to withstand high noise and current spikes, making it suitable for use in high-end, medium-duty drives. Its high-speed switching characteristics enable fast speed control and exhibit excellent transient performance. Furthermore, this IGBT exhibits lower thermal resistance than other components as well as a low cooling requirement.

Principle of Operation

The working principle of an IGBT is based on the combination of two components: an insulated-gate field-effect transistor (FET or MOSFET) and a bipolar junction transistor (BJT). The metal-oxide-semiconductor field-effect transistor (MOSFET) consists of a MOS gate electrode which is isolated from the body by a thin insulating layer of oxide. It is used to control the flow of gate current between the gate and the drain. The BJT is composed of two p-n junctions and is used to provide current gain for the IGBT. When a small positive gate-source voltage is applied to the gate of the MOSFET, a channel is formed between the source and drain to allow a large current to flow. The BJT is then able to boost the current and voltage gain in the IGBT. When the drain and source of the IGBT are biased in opposite directions, the flow of current is switched on and off using the gate-source voltage. When the gate electrode is grounded, the current flow is “on” where holes injected at the source can recombine with electrons injected at the drain. On the other hand, when the gate electrode is reverse-biased, the current flow is “off” due to the depletion region formed across the gate and the drain-source channel. This type of switching operation is fast, which makes IGBTs popular for power switching applications.

Conclusion

APT25GR120BSCD10 is an excellent choice for a variety of applications due to its exceptional thermal performance and switching characteristics. Its 1200V Vceo is suitable for medium-duty drive applications in industries such as plug-in molding and paper converting, as well as extensible past wind power or solar energy systems. The working principle of an IGBT is based on the combination of an insulated-gate field-effect transistor (FET or MOSFET) and a bipolar junction transistor (BJT). By using a small gate-source voltage, this IGBT is capable of switching current on and off in a fast and reliable manner, ideal for high-power applications.

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