APT30N60KC6

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The APT30N60KC6 transistor is a high-performance N-Channel power MOSFET which operates in a high-temperature range of -55 to 175 degrees Celsius, with a low on-state resistance and very low threshold voltage – making it ideal for applications in a variety of industries, ranging from audio and video systems to automotive, industrial, and military uses.

The APT30N60KC6 is a single N-Channel enhancement mode field-effect transistor (MOSFET) that is typically used in low-side switching applications. It features a maximum drain current of 30A, an enhanced linear region drain-source breakdown voltage of 600V, and a maximum drain-source voltage of 300V. In addition, it has a gate-source voltage (Vgs) of +/- 20V and a gate charge (Qg) of ~48nC. It has a maximum power dissipation of 130W, a maximum junction temperature of 175°C, an avalanche immunity of 40A, and an extremely fast switching time.

The APT30N60KC6 is particularly suitable for use in switching power supply systems in voltage regulator, battery chargers and DC-DC converter applications due to its excellent avalanche characteristics and very low on-state resistance. It also makes a great choice for motor control, pulse width modulation and sensing applications, due to its low on-state resistance and fast switching time.

The APT30N60KC6 MOSFET works by allowing a very small electrical charge to pass through its source and drain terminals to activate the transistor. When this charge passes through the gate terminal, it modulates the voltage applied to it, which in turn controls the flow of current through the transistor. This is known as the “gate effect” and is the main principle that governs the operation of MOSFETs. The APT30N60KC6 has a low gate-threshold voltage, which helps to reduce the power consumption of the device as well as improve efficiency.

The APT30N60KC6 is an excellent choice for audio and video applications, due to its very low on-state resistance and high switching speed, which eliminate the miller effect in audio amplifiers. Its low gate charge and avalanche characteristics also make it ideal for automotive and industrial applications and its fast switching time makes it well-suited for pulse width modulation and motor control applications. Furthermore, its high drain-source voltage and low on-state resistance also make it a great choice for sensing applications.

The APT30N60KC6 is a highly versatile and reliable MOSFET that is suitable for a variety of applications in many different industries, making it a great choice for those who require reliable, high-performance circuit components. Its fast switching time, low on-state resistance, high avalanche immunity, and very low gate threshold voltage make it the ideal choice for all kinds of electronic projects.

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