
Allicdata Part #: | APT33N90JCCU2-ND |
Manufacturer Part#: |
APT33N90JCCU2 |
Price: | $ 26.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 900V 33A SOT227 |
More Detail: | N-Channel 900V 33A (Tc) 290W (Tc) Chassis Mount SO... |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 23.67340 |
Vgs(th) (Max) @ Id: | 3.5V @ 3mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227 |
Mounting Type: | Chassis Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 290W (Tc) |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 6800pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 270nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 26A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Bulk |
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An APT33N90JCCU2 is a high-performance, high-voltage, break-through, insulated-gate bipolar transistor ( IGBT ). It is a three-terminal, isolated, high-speed switching device based on a new structure developed by Toshiba. It features a low on-state voltage drop of 1.4 V for tantalum gate drive and a low gate drive current of 2mA.
The APT33N90JCCU2 is a high voltage part specifically designed for industrial motor control, switchmode power supplies, uninterruptible power supplies, and DC-DC converters in a variety of applications. This device offers high speed switching performance, low capacitor delay, low on-state voltage, power efficiency and high current capability. Additionally, the APT33N90JCCU2 has a built-in protection feature which shields the device from accidental overvoltage damage.
The working principle of the APT33N90JCCU2 is the same as a MOSFET, which is based on the principles of field-effect transistors (FETs). It is comprised of two main components, a gate and a source. The gate is the control element of the transistor and is used to control the flow of current from the source to the drain. The source is the power source for the transistor.
When a voltage is applied to the gate, it creates an electric field around the gate. This electric field attracts free electrons near the gate, causing them to move towards the gate. This movement of electrons creates a channel of current between the source and the drain, which allows the current to flow. By controlling the voltage on the gate, the current flowing through the channel can be controlled, allowing the user to switch on or off the device.
The advantage of the APT33N90JCCU2 is that it is a high-voltage, low-current switch device. It is much faster than a MOSFET, which makes it ideal for applications requiring high switching speeds, such as automotive and power electronics. Additionally, the APT33N90JCCU2’s low on-state voltage allows it to be used in high-efficiency applications.
The APT33N90JCCU2 is an ideal device for a number of applications, including motor control, switch-mode power supplies, uninterruptible power supplies, and DC-DC converters. It offers extremely low onstate voltage, power efficiency and high-current capability. Additionally, the device offers built-in protection against accidental overvoltage damage. With its high speed operation, low power consumption and low voltage operation, the APT33N90JCCU2 is a perfect choice for your next application.
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