Allicdata Part #: | APT33N90JCCU3-ND |
Manufacturer Part#: |
APT33N90JCCU3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 900V 33A SOT227 |
More Detail: | N-Channel 900V 33A (Tc) 290W (Tc) Chassis Mount SO... |
DataSheet: | APT33N90JCCU3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 3mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227 |
Mounting Type: | Chassis Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 290W (Tc) |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 6800pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 270nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 26A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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APT33N90JCCU3 is a single Enhancement-Mode (normally-OFF) with N-Channel Field Effect Transistor. It is an advanced and powerful MOSFET technology that integrates low ON-resistance and fast switching speed to provide an improved level of performance. Here we will look at the application fields and working principle of this MOSFET.
Application Field
APT33N90JCCU3 can be used in variety of applications such as lighting, lamp ballasts, power supplies, motor control, and especially in Switch-Mode Power Supplies (SMPS), as well as for very high frequency switching such as for DC-DC converters. Moreover, it can also be effectively used in very low voltage and low current applications such as RF and low power analog amplification, where its low ON-resistance and fast switching speed can offer improved overall performance.
Working Principle
MOSFETs operate by varying a conductive channel between the source and drain contacts. The conductivity of the channel is determined by a voltage applied between the gate and source. A positive voltage between the gate and source causes the channel to increase in conductivity, thus allowing a current to flow between the source and drain. APT33N90JCCU3 is an Enhancement-Mode MOSFET, which has its gate-to-source voltage (VGS) set in a high (normally OFF) to very low (ON) range.
In order to turn the device ON and allow current to flow between the source and drain, a voltage of -2.5V needs to be applied to the gate-source of APT33N90JCCU3. This negative voltage numeral means that the gate is at a higher voltage potential than the source. Whereas if the voltage between gate and source is zero or above, then there will be no channel between source and drain.
The on-resistance of APT33N90JCCU3 can be controlled by adjusting the gate voltage. This is achieved by using a linear vary resistor or a potentiometer with low Gate-Source voltage. The Device is fully floating, so the source voltage can be left unconnected, or connected to either ground or any desired voltage level.
Finally, the APT33N90JCCU3 also provides temperature stability with low gate-latch Charge (Qg) and low reverse-body conduction current (Ios). It has a tendency to self-degrade when its body diode is reverse biased, and its switching speed is sufficient for use in high frequency applications. The source range for the APT33N90JCCU3 extends from -3V up to 12V.
In conclusion, the APT33N90JCCU3 is a robust and powerful MOSFET technology that is suitable for many applications and offers low on-resistance and fast switching speed. It is also suitable for use in switch-mode power supplies, DC-DC converters, and low power analog amplification, where its low ON-resistance and fast switching speed can offer improved overall performance.
The specific data is subject to PDF, and the above content is for reference
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